公开(公告)号：US20200271596A1

公开(公告)日：2020-08-27

申请号：US16349101

申请日：2019-04-12

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie VOLKOVICH ,  Ido DOLEV

IPC: G01N21/95 ,  H01L23/544 ,  H01L21/66 ,  G01N21/47 ,  G03F7/20 ,  H01L21/67

Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.

公开(公告)号：US20210149314A1

公开(公告)日：2021-05-20

申请号：US17161035

申请日：2021-01-28

Applicant: KLA-TENCOR CORPORATION

Inventor： Roie VOLKOVICH ,  Ido DOLEV

IPC: G03F7/20 ,  G01N21/95 ,  H01L23/544 ,  H01L21/66 ,  H01L21/67 ,  G01N21/47

Abstract: A method of measuring misregistration in the manufacture of semiconductor devices including providing a multilayered semiconductor device, using a scatterometry metrology tool to perform misregistration measurements at multiple sites on the multilayered semiconductor device, receiving raw misregistration data for each of the misregistration measurements, thereafter providing filtered misregistration data by removing outlying raw misregistration data points from the raw misregistration data for each of the misregistration measurements, using the filtered misregistration data to model misregistration for the multilayered semiconductor device, calculating correctables from the modeled misregistration for the multilayered semiconductor device, providing the correctables to the scatterometry metrology tool, thereafter recalibrating the scatterometry metrology tool based on the correctables and measuring misregistration using the scatterometry metrology tool following the recalibration.