METROLOGY IN THE PRESENCE OF CMOS UNDER ARRAY (CUA) STRUCTURES UTILIZING MACHINE LEARNING AND PHYSICAL MODELING

    公开(公告)号:US20250005435A1

    公开(公告)日:2025-01-02

    申请号:US18217290

    申请日:2023-06-30

    Abstract: A system may include a controller including processors configured to execute program instructions causing the processors to implement a measurement recipe by: generating a transformation model for transforming full loop optical measurement data to short loop optical measurement data, wherein the short loop optical measurement data includes optical measurement data of periodic memory array structures, wherein the full loop optical measurement data includes optical measurement data of complementary metal-oxide-semiconductor (CMOS) under array (CuA) devices, the CuA devices including CMOS structures beneath duplicates of the periodic memory array structures; generating a measurement model for determining measurements of the CuA devices; receiving full loop optical measurement data for CuA devices test samples; converting the full loop optical measurement data to short loop optical measurement data using the transformation model; and determining values of the measurements of the periodic memory array structures on the test samples using the measurement model.

    METROLOGY IN THE PRESENCE OF CMOS UNDER ARRAY (CUA) STRUCTURES UTILIZING AN EFFECTIVE MEDIUM MODEL WITH CLASSIFICATION OF CUA STRUCTURES

    公开(公告)号:US20250004384A1

    公开(公告)日:2025-01-02

    申请号:US18217199

    申请日:2023-06-30

    Abstract: A system, may include a controller configured to cause the processors to implement a measurement recipe by: receiving optical measurement data for training samples after a first process step for fabricating complementary metal-oxide-semiconductor (CMOS) under array (CuA) devices, wherein the CuA devices include first structures with a non-uniform spatial distribution; classifying the first structures into spatially-continuous regions based on unsupervised clustering; receiving optical measurement data for the training samples after a second process step, wherein the CuA devices after the second process step include periodic second structures above the first structures; developing effective medium models for the first structures; developing measurement models for determining measurements of the CuA devices; receiving optical measurement data for test samples after the second process step; and generating values of the metrology measurements of the second structures based on the optical measurement data for the test samples and the measurement models.

    METROLOGY IN THE PRESENCE OF CMOS UNDER ARRAY (CUA) STRUCTURES UTILIZING AN EFFECTIVE MEDIUM MODEL WITH PHYSICAL MODELING

    公开(公告)号:US20250004047A1

    公开(公告)日:2025-01-02

    申请号:US18217236

    申请日:2023-06-30

    Abstract: A system may include a controller including one or more processors configured to execute program instructions causing the one or more processors to implement a measurement recipe by: receiving optical measurement data for training samples including complementary metal-oxide-semiconductor (CMOS) under array (CuA) devices, wherein the CuA devices include CMOS structures disposed beneath periodic memory array structures; developing a first measurement model for determining measurements of the CuA devices based on the optical measurement data, wherein the CMOS structures are modeled as a CMOS effective medium in the first measurement model; receiving reference data for the training samples; updating the first measurement model to a second measurement model that includes the values of dispersion parameters of the CMOS effective medium; receiving optical measurement data for test samples including CuA devices; and generating values of the one or more metrology measurements of the CuA devices based on the second measurement model.

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