Semiconductor hot-spot and process-window discovery combining optical and electron-beam inspection

    公开(公告)号:US11055840B2

    公开(公告)日:2021-07-06

    申请号:US16582846

    申请日:2019-09-25

    申请人: KLA Corporation

    IPC分类号: G06T7/00 G01N21/95

    摘要: To evaluate a semiconductor-fabrication process, a semiconductor wafer is obtained that includes die grouped into modulation sets. Each modulation set is fabricated using distinct process parameters. The wafer is optically inspected to identify defects. A nuisance filter is trained to classify the defects as DOI or nuisance defects. Based on results of the training, a first, preliminary process window for the wafer is determined and die structures having DOI are identified in a first group of modulation sets bordering the first process window. The trained nuisance filter is applied to the identified defects to determine a second, revised process window for the wafer. A third, further revised process window for the wafer is determined based on SEM images of specified care areas in one or more modulation sets within the second, revised process window. A report is generated that specifies the third process window.

    Semiconductor Hot-Spot and Process-Window Discovery Combining Optical and Electron-Beam Inspection

    公开(公告)号:US20210042908A1

    公开(公告)日:2021-02-11

    申请号:US16582846

    申请日:2019-09-25

    申请人: KLA Corporation

    IPC分类号: G06T7/00 G01N21/95

    摘要: To evaluate a semiconductor-fabrication process, a semiconductor wafer is obtained that includes die grouped into modulation sets. Each modulation set is fabricated using distinct process parameters. The wafer is optically inspected to identify defects. A nuisance filter is trained to classify the defects as DOI or nuisance defects. Based on results of the training, a first, preliminary process window for the wafer is determined and die structures having DOI are identified in a first group of modulation sets bordering the first process window. The trained nuisance filter is applied to the identified defects to determine a second, revised process window for the wafer. A third, further revised process window for the wafer is determined based on SEM images of specified care areas in one or more modulation sets within the second, revised process window. A report is generated that specifies the third process window.