知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.021 seconds)

    PRODUCING METHOD OF RADIATION DETECTION ELEMENT AND RADIATION DETECTION ELEMENT
    2.
    发明申请
    PRODUCING METHOD OF RADIATION DETECTION ELEMENT AND RADIATION DETECTION ELEMENT 审中-公开

    公开(公告)号：US20200035934A1

    公开(公告)日：2020-01-30

    申请号：US16292369

    申请日：2019-03-05

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Hyangmi JUNG ,  Satomi TAGUCHI ,  Isao TAKASU ,  Yuko NOMURA ,  Rei Hasegawa

    IPC: H01L51/44 ,  H01L51/00 ,  H01L51/42 ,  H01L51/50

    Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.

    RADIATION DETECTOR
    3.
    发明申请
    RADIATION DETECTOR 审中-公开

    公开(公告)号：US20180156930A1

    公开(公告)日：2018-06-07

    申请号：US15692040

    申请日：2017-08-31

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Satomi TAGUCHI ,  Atsushi WADA ,  Isao TAKASU ,  Naoto KUME ,  Mitsuyoshi KOBAYASHI

    IPC: G01T3/06 ,  G01T1/20

    CPC classification number: G01T3/06 ,  G01T1/2002 ,  G01T1/2018

    Abstract: According to one embodiment, a radiation detector includes a stacked body. The stacked body includes a first scintillator layer, a first conductive layer, a second conductive layer and an organic semiconductor layer. The second conductive layer is provided between the first scintillator layer and the first conductive layer. The organic semiconductor layer is provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first element. The first element includes at least one selected from the group consisting of boron, gadolinium, helium, lithium, and cadmium.

    RADIATION DETECTOR
    7.
    发明申请
    RADIATION DETECTOR 审中-公开

    公开(公告)号：US20190148659A1

    公开(公告)日：2019-05-16

    申请号：US15911346

    申请日：2018-03-05

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Hyangmi JUNG ,  Yuko NOMURA ,  Satomi TAGUCHI

    IPC: H01L51/42 ,  H01L51/00

    CPC classification number: H01L51/4253 ,  B82Y15/00 ,  H01L27/308 ,  H01L51/0037 ,  H01L51/0043 ,  H01L51/0047 ,  H01L51/0077

    Abstract: According to one embodiment, a radiation detector includes first, and second conductive layers, and an organic layer. The organic layer is provided between the first and second conductive layers. A first thickness of the organic layer along a first direction from the second conductive layer toward the first conductive layer is 1 μm or more. The organic layer includes a first compound of a first conductivity type, and a second compound of a second conductivity type. A first value of (0.9·λ)/(w1·cos θ1) for a first peak of X-ray analysis of the organic layer is not less than 13 nm and not more than 19 nm. The first value is obtained from a first Bragg angle θ1 (radians), a first full width at half maximum w1 (radians) of the 2θ1 peak, and an X-ray wavelength λ (nm). The 2θ1 is not less than 0.0750 radians and not more than 0.1100 radians.

Patent Agency Ranking