公开(公告)号：US20010025926A1

公开(公告)日：2001-10-04

申请号：US09819898

申请日：2001-03-29

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoya Mashio ,  Yoshinori Iida ,  Keitaro Shigenaka

IPC: H01L027/14 ,  H01L021/00

CPC classification number: G01J5/20 ,  H01L27/14649 ,  H01L27/14687

Abstract: Object of the present invention is to provide a thermal type infrared sensor and a method of manufacturing the same that degree of freedom of a structure is high and cost is low. An infrared ray detecting portion and a support leg are formed above a flat plate-shape void formed inside of a semiconductor substrate, and a processing circuit section of a signal from a detecting portion is fabricated on the semiconductor substrate. Because the structure of the processing circuit section is not influenced by a substrate structure, characteristics is improved. Furthermore, the structure is simplified, and it is possible to reduce a manufacturing cost.

Abstract translation: 本发明的目的在于提供一种热式红外线传感器及其制造方法，其结构的自由度高，成本低。 在形成在半导体衬底内部的平板状空隙的上方形成红外线检测部和支撑腿，在半导体基板上制作来自检测部的信号的处理电路部。 由于处理电路部分的结构不受衬底结构的影响，因此提高了特性。 此外，结构简化，并且可以降低制造成本。

公开(公告)号：US20040129882A1

公开(公告)日：2004-07-08

申请号：US10647345

申请日：2003-08-26

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Naoya Mashio ,  Keitaro Shigenaka ,  Hideyuki Funaki ,  Yoshinori Iida ,  Ikuo Fujiwara

IPC: G01J005/00

CPC classification number: G01J5/08 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/0245 ,  G01J5/0853 ,  G01J5/14 ,  G01J5/22 ,  G01J2005/123 ,  H04N5/33

Abstract: An infrared image sensor encompasses (a) a base body, (b) a plurality of signal lines disposed on the base body, (c) a plurality of address lines intersecting the signal lines, (d) a plurality of detector portions provided in the cross region of the signal lines and the address lines, each of the detector portions being connected between the corresponding signal line and the address line, each of the detector portions is configured to detect infrared-ray, (e) a plurality of supporting beams supporting each of the detector portions above the base body, and (f) a plurality of contactors configured to contact each of the detector portions with the base body thermally so as to transport thermal energy to be accumulated in each of the detector portions toward the base body.

Abstract translation: 红外图像传感器包括（a）基体，（b）设置在基体上的多条信号线，（c）与信号线交叉的多个地址线，（d）多个检测器部分， 信号线的交叉区域和地址线，每个检测器部分连接在对应的信号线和地址线之间，每个检测器部分被配置为检测红外线，（e）多个支撑梁 每个检测器部分在基体上方，以及（f）多个接触器，其构造成使得每个检测器部分与基体热接触，以便将热能积聚在每个检测器部分中朝向基体 。

公开(公告)号：US20020139933A1

公开(公告)日：2002-10-03

申请号：US10108391

申请日：2002-03-29

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC: G01J005/00

CPC classification number: G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/16

Abstract: A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

Abstract translation: 一种用于支撑在半导体衬底上的腔中的支撑束线，包括用于吸收入射红外线并将其转换成热的红外吸收部分的红外检测像素和用于转换由热量引起的温度变化的热电转换部分 在红外线吸收部分中产生的电信号由与外围电路中使用的镶嵌金属栅极MOS晶体管的栅极相同的一层上的镶嵌金属形成。 支撑梁线包括具有U形横截面的导体线，其中填充有金属。

公开(公告)号：US20030178565A1

公开(公告)日：2003-09-25

申请号：US10393259

申请日：2003-03-21

Applicant: Kabushiki Kaisha Toshiba

Inventor： Keitaro Shigenaka ,  Naoya Mashio

IPC: H01L025/00

CPC classification number: H01L27/14669 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14683

Abstract: A thermal type infrared ray imaging device has a plurality of cells arranged on a substrate each having a photothermal conversion part which converts an infrared ray into heat, and a thermoelectric conversion part which is provided below the photothermal conversion part and which converts the heat generated by the photothermal conversion part into an electric signal, a selection part which selects some cells among the plurality of cells, and an output part which outputs the electric signal generated by the thermoelectric conversion part of the selected cells. The photothermal conversion part includes a first photothermal conversion layer and a second photothermal conversion layer provided over and apart from the first photothermal conversion layer, which converts an infrared ray within a waveband different from the waveband of the first photothermal conversion layer into heat. The thermoelectric conversion part includes a first thermoelectric conversion part which converts the heat generated by the first photothermal conversion layer into the electric signal and a second thermoelectric conversion part which is thermally separated from the first thermoelectric conversion part, and which converts the heat generated by the second photothermal conversion layer into the electric signal.

Abstract translation: 一种热式红外线成像装置，具有设置在基板上的多个单元，每个单元具有将红外线转换成热量的光热转换部，以及设置在光热转换部下方的热电转换部，其将由 光热转换部分变为电信号，选择部分，其选择多个单元中的一些单元;以及输出部，其输出由所选择的单元的热电转换部生成的电信号。 光热转换部分包括第一光热转换层和设置在第一光热转换层之上并与第一光热转换层分离的第二光热转换层，其将不同于第一光热转换层的波段的波段内的红外线转换成热。 热电转换部包括将由第一光热转换层产生的热量转换为电信号的第一热电转换部和与第一热电转换部热分离的第二热电转换部， 第二光热转换层进入电信号。

公开(公告)号：US20020039838A1

公开(公告)日：2002-04-04

申请号：US09964696

申请日：2001-09-28

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yoshinori Iida ,  Shigenaka Keitaro ,  Naoya Mashio

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L27/1467 ,  G01J5/10 ,  G01J5/20 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/14692

Abstract: An infrared sensor including a substrate, a plurality of infrared detection pixels arrayed on a substrate with each of the infrared detection pixels including an infrared absorption portion formed over the substrate and configured to absorb infrared radiation, a thermoelectric converter portion formed over the substrate and configured to convert a temperature change in the infrared absorption portion into an electrical signal, and support structures configured to support the thermoelectric converter portion and the infrared absorption portion over the substrate via a separation space, the support structures having conductive interconnect layers configured to deliver the electrical signal from the thermoelectric converter portion to the substrate. The infrared sensor further includes a pixel selection circuit configured to select at least one of the infrared detection pixels which delivers the electrical signal and an output circuit configured to output the electrical signal delivered from selected infrared detection pixels via the conductive interconnect layers. The conductive interconnect layers include a material the same as a material of gate layers of the MOS transistors, and have a thickness similar to the gate layers.

Abstract translation: 一种红外线传感器，包括基板，在基板上排列的多个红外线检测像素，其中，所述红外线检测像素包括形成在所述基板上的红外线吸收部，构成为吸收红外线的辐射;形成在所述基板上的热电转换部， 将红外吸收部分的温度变化转换为电信号，以及支撑结构，其被配置为经由分离空间将热电转换器部分和红外吸收部分支撑在衬底上，所述支撑结构具有导电互连层， 信号从热电转换器部分到基板。 红外传感器还包括被配置为选择传送电信号的红外检测像素中的至少一个的像素选择电路和被配置为经由导电互连层输出从所选择的红外检测像素传送的电信号的输出电路。 导电互连层包括与MOS晶体管的栅极层的材料相同的材料，并且具有类似于栅极层的厚度。

公开(公告)号：US20010028035A1

公开(公告)日：2001-10-11

申请号：US09819596

申请日：2001-03-29

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC: H01L027/14 ,  H01L021/00

CPC classification number: H01L31/103 ,  G01J5/10 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14683 ,  H01L31/024 ,  H01L31/035281 ,  Y02E10/50

Abstract: An object of the present invention is to provide a high-sensitivity infrared sensor. According to the present invention, a support member for supporting a sensor portion in a cavity structure is formed to be remarkably thin as compared with a conventional structure, a sectional area of the support member is considerably reduced, heat conductance can remarkably be reduced and, as a result, the infrared sensor having a remarkably high sensitivity can be obtained. Moreover, according to the present invention, since an insulating layer of a support member area is etched, and a sacrifice silicon film is embedded in the area, an aspect ratio of an insulating layer RIE for forming a support leg is remarkably reduced. A manufacturing process is facilitated, a sectional area of the support leg is further reduced as a secondary effect, and the sensitivity of the infrared sensor can further be enhanced.

Abstract translation: 本发明的目的是提供一种高灵敏度红外传感器。 根据本发明，与传统结构相比，用于支撑腔结构中的传感器部分的支撑构件形成为非常薄，支撑构件的截面积显着减小，导热性可以显着降低， 结果，可以获得具有非常高的灵敏度的红外线传感器。 此外，根据本发明，由于蚀刻了支撑构件区域的绝缘层，并且在该区域中埋设牺牲硅膜，所以用于形成支撑腿的绝缘层RIE的纵横比显着降低。 便于制造过程，作为副作用，支撑腿的截面积进一步减小，并且可以进一步提高红外线传感器的灵敏度。