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公开(公告)号：US11846017B2
公开(公告)日：2023-12-19
申请号：US17271433
申请日：2019-08-19
发明人： Tetsuya Takahashi , Satoshi Hirota , Rainer Cremer
IPC分类号： C23C16/27 , C23C16/458
CPC分类号： C23C16/271 , C23C16/458
摘要： Provided is a hot filament CVD device capable of easily attaching, detaching, and replacing a filament. The hot filament CVD device includes a chamber, a base material support that supports multiple base materials, filament cartridges, and paired holding parts. The filament cartridges each include multiple filaments (60), a first frame, a second frame, and paired connecting members. The paired holding parts guide each of the filament cartridges when it is inserted into the chamber, and hold the filament cartridges in the chamber so that the filament cartridges face the multiple base materials.
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公开(公告)号：US20130105310A1
公开(公告)日：2013-05-02
申请号：US13661489
申请日：2012-10-26
发明人： Satoshi Hirota , Kenji Yamamoto , Hiroshi Tamagaki
IPC分类号： C23C14/35
CPC分类号： H01J37/3405 , H01J37/3444 , H01J37/3452
摘要： A film formation apparatus of the present invention has two sputtering evaporation sources each of which includes an unbalanced magnetic field formation means formed by an inner pole magnet arranged on the inner side and an outer pole magnet arranged on the outer side of this inner pole magnet, the outer pole magnet having larger magnetic line density than the inner pole magnet, and a target arranged on a front surface of the unbalanced magnetic field formation means, and further has an AC power source for applying alternating current whose polarity is switched with a frequency of 10 kHz or more between the targets of the two sputtering evaporation sources so as to generate discharge between both the targets and perform film formation.
摘要翻译： 本发明的成膜装置具有两个溅射蒸发源，每个溅射源包括由设置在内侧的内磁极形成的不平衡磁场形成装置和设置在该内磁极外侧的外磁极磁体， 所述外磁极磁体具有比所述内极磁体更大的磁线密度，以及设置在所述不平衡磁场形成装置的前表面上的靶，并且还具有AC电源，用于施加交流电，所述交流电极的极性以 在两个溅射源之间的靶之间为10kHz以上，以便在两个靶之间产生放电并进行成膜。
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