公开(公告)号：US20170051180A1

公开(公告)日：2017-02-23

申请号：US15118723

申请日：2015-01-23

Applicant: K.C. Tech Co., Ltd.

Inventor： Jang Kuk KWON ,  Chan Un JEON ,  Ki Hwa JUNG ,  Jung Yoon KIM ,  Nak Hyun CHOI ,  Seong Pyo LEE ,  Bo Hyeok CHOI

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/321 ,  C09K3/14 ,  H01L21/3105

CPC classification number: C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.

Abstract translation: 本发明涉及一种制备由其制备的浆料组合物和浆料组合物的方法，并且具有减少划痕和残留颗粒的优点，这被认为是造成大颗粒产量下降的最大因素之一和聚集 同时在半导体CMP工艺中保持高抛光速率。 此外，本发明可以在应用于超大规模集成半导体工艺中所需的各种图案，满足需要的抛光速率，抛光选择性和抛光均匀性的晶片不均匀性（WIWNU）方面获得优异的结果 ，和微划痕最小化。