公开(公告)号：US20120217633A1

公开(公告)日：2012-08-30

申请号：US13036897

申请日：2011-02-28

申请人： Jen-Hao LIU ,  Chyi-Tsong NI ,  Hsiao-Yin LIN ,  Chung-Min LIN

发明人： Jen-Hao LIU ,  Chyi-Tsong NI ,  Hsiao-Yin LIN ,  Chung-Min LIN

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L23/3192 ,  H01L21/76834 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness T1 and being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness T2 about 20% to 50% of the thickness T1.

摘要翻译： 本公开的实施例提供一种半导体器件。 半导体器件包括多个金属化层，其包括最上面的金属化层。 最上面的金属化层具有两个具有厚度T1并被间隙隔开的金属特征。 复合钝化层包括氮化物层下的HDP CVD氧化物层。 复合钝化层设置在金属特征上并部分填充间隙。 复合钝化层的厚度T2约为厚度T1的20％至50％。