公开(公告)号：US5559349A

公开(公告)日：1996-09-24

申请号：US399802

申请日：1995-03-07

申请人： James R. Cricchi ,  Paul A. Potyraj ,  Mike L. Salib

发明人： James R. Cricchi ,  Paul A. Potyraj ,  Mike L. Salib

IPC分类号： H01L27/06 ,  H01L29/80

CPC分类号： H01L27/0623

摘要： A silicon microwave monolothic integrated circuit device and method of fabricating having a high resistivity silicon substrate with a masking layer of low temperature silicon oxide, silicon nitride and polysilicon sublayers on a first area, and an epitaxial layer over the surface of the silicon substrate in a second area. The active devices are formed over the second area and the passive devices are formed over the first area.

摘要翻译： 一种硅微波单相集成电路器件及其制造方法，其具有在第一区域上具有低温氧化硅，氮化硅和多晶硅子层的掩蔽层的高电阻率硅衬底，以及在硅衬底的表面上的外延层 第二区。 有源器件形成在第二区域上，无源器件形成在第一区域上。

公开(公告)号：US07728771B2

公开(公告)日：2010-06-01

申请号：US11773105

申请日：2007-07-03

申请人： Michael J. Lee ,  Eric V. Miller ,  Joseph A. Faulkner ,  Cynthia W. Berry ,  Gene A. Digennaro ,  Kerron R. Duncan ,  Ronald G. Freitag ,  Tapan K. Gupta ,  Harry V. Guy, III ,  Vincent G. Karasack ,  Dave M. Krafcsik ,  Brian T. McMonagle ,  Robert B. Middleton ,  Benjamin R. Myers ,  Mike L. Salib ,  John P. Vitamvas ,  Thomas M. Walsh ,  Eric D. Zirofsky ,  John W. Gipprich

发明人： Michael J. Lee ,  Eric V. Miller ,  Joseph A. Faulkner ,  Cynthia W. Berry ,  Gene A. Digennaro ,  Kerron R. Duncan ,  Ronald G. Freitag ,  Tapan K. Gupta ,  Harry V. Guy, III ,  Vincent G. Karasack ,  Dave M. Krafcsik ,  Brian T. McMonagle ,  Robert B. Middleton ,  Benjamin R. Myers ,  Mike L. Salib ,  John P. Vitamvas ,  Thomas M. Walsh ,  Eric D. Zirofsky ,  John W. Gipprich

IPC分类号： H01Q3/36

CPC分类号： H01Q21/0025 ,  H01Q13/085 ,  H01Q21/08

摘要： A multi-channel, dual-band, radio frequency (RF) transmit/receive (T/R) module, for an active electronically scanned array, is provided. The module includes a compact, RF manifold connector and at least four T/R channels. Each of the T/R channels includes a notch radiator, a diplexer coupled to the notch radiator, a power amplifier, including at least one dual-band gain stage, coupled to the notch radiator, a low noise amplifier, including at least one lower-band gain stage and at least one upper-band gain stage, coupled to the diplexer, and a T/R cell, including a phase shifter, a signal attenuator and at least one dual-band gain stage, coupled to the power amplifier, the low noise amplifier and the manifold connector.

摘要翻译： 提供了一种用于主动电子扫描阵列的多通道，双频，射频（RF）发射/接收（T / R）模块。 该模块包括紧凑的RF歧管连接器和至少四个T / R通道。 T / R通道中的每一个包括陷波辐射器，耦合到陷波辐射器的双工器，功率放大器，包括耦合到陷波辐射器的至少一个双频带增益级，低噪声放大器，包括至少一个下部 耦合到双工器的至少一个高频带增益级和耦合到功率放大器的T / R单元，包括移相器，信号衰减器和至少一个双频带增益级， 低噪声放大器和歧管连接器。

公开(公告)号：US5070304A

公开(公告)日：1991-12-03

申请号：US543919

申请日：1990-06-21

申请人： Mike L. Salib ,  Marvin Cohn

发明人： Mike L. Salib ,  Marvin Cohn

IPC分类号： H03F3/60

CPC分类号： H03F3/604 ,  H03F3/607

摘要： An improved distributed amplifier usable, for example, in the gigahertz frequency range for radar and electronic warfare applications is disclosed. In the amplifier stage a combination of optimum amplifier stage loading, a reflection cancelling output network, and an amplifier capacitance hiding input arrangement are employed. The disclosure includes specific component values for one embodiment of the invention.

摘要翻译： 公开了一种可用于雷达和电子战应用的千兆兹频率范围内的改进的分布式放大器。 在放大器级中，采用最佳放大器级负载，反射消除输出网络和放大器电容隐藏输入装置的组合。 本公开包括本发明的一个实施例的特定组件值。

公开(公告)号：US06993312B1

公开(公告)日：2006-01-31

申请号：US10855391

申请日：2004-05-28

申请人： Mike L. Salib

发明人： Mike L. Salib

IPC分类号： H04B1/26

CPC分类号： H03D9/0633

摘要： A double balanced mixer consisting of an RF balun, a local oscillator balun and a diode “quad” bridge circuit connected between the two baluns and where the IF output is taken at the center tap of the RF balun secondary transformer. A second harmonic termination consisting of an RLC resonant circuit is coupled across the diode bridge at the RF side. Each arm of the diode bridge, moreover, includes three series connected diodes. The mixer is in the form of a microminiature integrated circuit (MMIC) using HBT emitter-based junction diodes fabricated on a gallium arsenide (GaAs) substrate.

摘要翻译： 双平衡混频器由RF平衡 - 不平衡变压器，本地振荡器平衡 - 不平衡变压器和连接在两个巴伦之间的二极管“四通道”桥接器组成，其中IF输出在RF巴伦次级变压器的中心抽头处。 由RLC谐振电路组成的二次谐波端接在RF侧跨过二极管桥耦合。 此外，二极管电桥的每个臂都包括三个串联的二极管。 混合器采用在砷化镓（GaAs）衬底上制造的基于HBT发射极的结二极管的微型集成电路（MMIC）的形式。

公开(公告)号：US6144252A

公开(公告)日：2000-11-07

申请号：US851993

申请日：1997-05-06

申请人： Mike L. Salib ,  John J. Zingaro

发明人： Mike L. Salib ,  John J. Zingaro

IPC分类号： H01L27/082 ,  H03F3/19 ,  H03F3/60 ,  H03K19/82

CPC分类号： H03F3/19 ,  H01L27/082 ,  H03F3/60

摘要： A plurality of heterojunction bipolar transistors (HBTs), each including one or more HBT cells, are combined so as to drive all of the cells equally and involves coupling the input drive signal via a pair of microstrip transmission lines to the two farthest transistors having a first common circuit node therebetween. A third microstrip transmission line is located between the other two microstrip transmission lines and is connected from the first circuit node to a second circuit node which is common to the two nearer transistors in order to couple the drive signal in an opposite direction to the nearer transistors. In such an arrangement, a negative mutual inductance exists between the center transmission line and the two outer transmission lines. The microstrip transmission lines are designed with physical dimensions and mutual separation distances so that the total inductance of the transmission lines which exists between the circuit nodes equals the mutual inductance be therebetween. The resulting net inductance will be zero and accordingly all four heterojunction bipolar transistors will be driven with signals applied to the respective bases which are equal in magnitude and in phase.

摘要翻译： 每个包含一个或多个HBT单元的多个异质结双极晶体管（HBT）被组合以便均匀地驱动所有单元，并且涉及通过一对微带传输线将输入驱动信号耦合到两个最远的晶体管，其具有 第一公共电路节点。 第三微带传输线位于其它两条微带传输线之间，并且从第一电路节点连接到两个较近晶体管共同的第二电路节点，以将驱动信号与相邻的晶体管相反的方向耦合 。 在这种布置中，中心传输线与两条外部传输线之间存在负互感。 微带传输线被设计成具有物理尺寸和相互间隔距离，使得存在于电路节点之间的传输线的总电感等于它们之间的互感。 所得到的净电感将为零，因此所有四个异质结双极晶体管将由施加到相应基极的信号驱动，这两个基极的幅度和相位相等。

公开(公告)号：US06810241B1

公开(公告)日：2004-10-26

申请号：US10058279

申请日：2002-01-30

申请人： Mike L. Salib

发明人： Mike L. Salib

IPC分类号： H04B126

CPC分类号： H03D9/0633

摘要： A mixer having a diode quad, and which receives two RF signals at an RF input balun having primary and secondary windings. A resonant circuit arrangement includes at least a capacitor circuit element in parallel with the secondary winding to form an open circuit termination for the second harmonics of the input RF signals.

摘要翻译： 具有二极管四极管并且在具有初级和次级绕组的RF输入平衡 - 不平衡变换器上接收两个RF信号的混频器。 谐振电路装置至少包括与次级绕组并联的电容器电路元件，以形成输入RF信号的二次谐波的开路端接。

公开(公告)号：US06529063B1

公开(公告)日：2003-03-04

申请号：US08870406

申请日：1997-06-06

申请人： Burhan Bayraktaroglu ,  Mike L. Salib

发明人： Burhan Bayraktaroglu ,  Mike L. Salib

IPC分类号： H01L3500

CPC分类号： H03F3/211 ,  H01L23/34 ,  H01L2924/0002 ,  H03F1/22 ,  H03F2203/21178 ,  H01L2924/00

摘要： A thermally stabilized cascode heterojunction bipolar transistor (TSC-HB) having the current and power generation regions in separate temperature zones, each transistor collector in a cold zone connected directly and individually to an emitter terminal of a corresponding transistor in a hot zone, thereby limiting the current available to the emitter of the transistor in the hot zone. Such an interconnection of transistors prevents the transistor in the hot zone from drawing more current from other transistor sources when increases in temperature occur. This achieves thermal stability and prevents the transistors from overheating and burning out.

摘要翻译： 具有在分开的温度区域中的电流和发电区域的热稳定的共源共栅异质结双极晶体管（TSC-HB），冷区中的每个晶体管集电极直接并且单独地连接到热区中对应的晶体管的发射极端子，从而限制 在热区的晶体管的发射极可用的电流。 晶体管的这种互连可以防止当温度升高时，热​​区中的晶体管从其它晶体管源引起更多的电流。 这实现了热稳定性并防止晶体管过热和烧坏。