Termination structure for superjunction device
    1.
    发明申请
    Termination structure for superjunction device 有权
    超级连接装置的端接结构

    公开(公告)号:US20030011046A1

    公开(公告)日:2003-01-16

    申请号:US10190152

    申请日:2002-07-03

    Inventor: Zhijun Qu

    CPC classification number: H01L29/7811 H01L29/0634 H01L29/41766 H01L29/7802

    Abstract: A termination structure for a superjunction device on which the net charge between P pylons in an Nnull termination region is intentionally unbalanced and is negative. The P pylons in the termination area are further non-uniformly located relative to those in the active area. A field ring which is an extension of the source electrode terminates at a radial mid point of the termination region.

    Abstract translation: 用于超结装置的端接结构,其中N-端接区域中的P型塔架之间的净电荷有意地不平衡并且是负的。 终端区域中的P型塔架相对于活动区域中的P型塔架进一步不均匀地定位。 作为源电极的延伸的场环在终止区域的径向中点终止。

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