公开(公告)号：US20020190338A1

公开(公告)日：2002-12-19

申请号：US10170859

申请日：2002-06-12

Applicant: International Rectifier Corp.

Inventor： Slawomir Skocki

IPC: H01L029/47

CPC classification number: H01L29/0619 ,  H01L29/872

Abstract: A composite field ring for a Schottky diode has a low concentration deep portion to increase breakdown voltage withstand and a high concentration, shallow region to enable minority carrier injection during high forward current conduction. The composite ring permits a reduction in the thickness of the epitaxially formed layer which receives the Schottky barrier metal.

Abstract translation: 用于肖特基二极管的复合场环具有低浓度深部分以增加耐压耐压和高浓度的浅区域，以在高正向电流传导期间实现少数载流子注入。 复合环允许减小接收肖特基势垒金属的外延形成层的厚度。