公开(公告)号：US09059204B2

公开(公告)日：2015-06-16

申请号：US14263067

申请日：2014-04-28

Applicant: International Business Machines Corporation

Inventor： Kai D. Feng ,  J. Edwin Hostetter, Jr. ,  Ping-Chuan Wang ,  Zhijian Yang

IPC: H01L21/02 ,  H01L29/66 ,  H01L21/326 ,  G01R31/27 ,  H01L29/78

CPC classification number: H01L29/66477 ,  G01R31/275 ,  H01L21/326 ,  H01L29/7833

Abstract: A method and apparatus for repairing transistors may include applying a first voltage to a source, a second voltage to the gate and a third voltage to the drain for a predetermined time. In this manner the transistor structure may be repaired or returned to operate at or near the original operating characteristics.

Abstract translation: 用于修复晶体管的方法和装置可以包括向源极施加第一电压，向栅极施加第二电压并将第三电压施加到漏极预定时间。 以这种方式，晶体管结构可以被修复或返回以在原始操作特性或附近操作。

公开(公告)号：US09059051B2

公开(公告)日：2015-06-16

申请号：US13889374

申请日：2013-05-08

Applicant: International Business Machines Corporation

Inventor： Hanyi Ding ,  J. Edwin Hostetter, Jr. ,  Ping-Chuan Wang ,  Kimball M. Watson

IPC: H01L21/66

CPC classification number: H01L22/26 ,  H01L21/304 ,  H01L22/14 ,  H01L22/34

Abstract: A through-silicon via (TSV) capacitive test structure and method of determining TSV depth based on capacitance is disclosed. The TSV capacitive test structure is formed from a plurality of TSV bars that are evenly spaced. A first group of bars are electrically connected to form a first capacitor node, and a second group of bars is electrically connected to form a second capacitor node. The capacitance is measured, and a TSV depth is computed, prior to backside thinning. The computed TSV depth may then be fed to downstream grinding and/or polishing tools to control the backside thinning process such that the semiconductor wafer is thinned such that the backside is flush with the TSV.

Abstract translation: 公开了一种通过硅通孔（TSV）电容测试结构和基于电容确定TSV深度的方法。 TSV电容测试结构由均匀间隔的多个TSV条形成。 第一组电杆电连接以形成第一电容器节点，并且第二组电杆电连接以形成第二电容器节点。 测量电容，并在背面变薄之前计算TSV深度。 然后计算的TSV深度可以被馈送到下游研磨和/或抛光工具以控制背面变薄处理，使得半导体晶片变薄使得背面与TSV齐平。