公开(公告)号：US20220415908A1

公开(公告)日：2022-12-29

申请号：US17375540

申请日：2021-07-14

Applicant: Intel Corporation

Inventor： Guangyu Huang ,  Dipanjan Basu ,  Meng-Wei Kuo ,  Randy Koval ,  Henok Mebrahtu ,  Minsheng Wang ,  Jie Li ,  Fei Wang ,  Qun Gao ,  Xingui Zhang ,  Guanjie Li

IPC: H01L27/1157 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/792

Abstract: Systems, apparatuses and methods may provide for memory cell technology comprising a control gate, a conductive channel, and a charge storage structure coupled to the control gate and the conductive channel, wherein the charge storage structure includes a polysilicon layer and a metal layer. In one example, the metal layer includes titanium nitride or other high effective work function metal.