公开(公告)号：US20040056560A1

公开(公告)日：2004-03-25

申请号：US10254402

申请日：2002-09-25

Applicant: Intel Corporation

Inventor： Li-Peng Wang ,  Qing Ma ,  Israel Yankovich

IPC: H01L041/08

CPC classification number: H03H3/02 ,  H03H9/02133 ,  H03H9/174 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49135 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator formed on a substrate includes a layer of piezoelectric material having a first major surface, and a second major surface sandwiched between a first conductive and a second conductive layer. The substrate on which the film bulk acoustic resonator is formed has an opening therein which exposes the first conductive layer of the film bulk acoustic resonator. The opening is substantially in the shape of a parallelogram having a first pair of parallel sides and a second pair of parallel sides. One of the first pair of parallel sides makes an angle at other than 90 degrees with one of the second pair of parallel sides.

Abstract translation: 形成在基板上的薄膜体声波谐振器包括具有第一主表面的压电材料层和夹在第一导电层和第二导电层之间的第二主表面。 其上形成有膜体声波谐振器的基板在其中具有暴露薄膜体声波谐振器的第一导电层的开口。 开口基本上具有平行四边形的形状，该平行四边形具有第一对平行边和第二对平行边。 第一对平行边之一与第二对平行边之一形成不同于90度的角度。

公开(公告)号：US20030112095A1

公开(公告)日：2003-06-19

申请号：US10023594

申请日：2001-12-17

Applicant: Intel Corporation

Inventor： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

IPC: H01L041/18

CPC classification number: H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion. A method for forming the device includes depositing a first portion of a first electrode, and a piezoelectric layer onto the substrate. The method includes removing a portion of the substrate under the piezoelectric layer and under the portion of the first electrode, and depositing a second portion of the first electrode onto the piezoelectric film layer and onto the first portion of the first electrode.

Abstract translation: 在基板上形成膜体声波谐振器。 膜体声波谐振器包括具有靠近衬底的第一表面的压电材料层和远离衬底的第二表面。 沉积在压电材料的第一表面上的第一导电层包括具有与与第二部分相关联的表面不同的平面上的表面的第一部分。 一种形成该器件的方法包括将第一电极的第一部分和压电层沉积到该衬底上。 该方法包括：在压电层下方和第一电极的部分之下去除衬底的一部分，并将第一电极的第二部分沉积到压电膜层上并且沉积到第一电极的第一部分上。

公开(公告)号：US20040104640A1

公开(公告)日：2004-06-03

申请号：US10716750

申请日：2003-11-19

Applicant: Intel Corporation

Inventor： Li-Peng Wang ,  Qing Ma ,  Valluri Rao

IPC: H02N002/00 ,  H01L041/04

CPC classification number: H03H9/174 ,  H03H3/02 ,  H03H2003/023 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49156

Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.

Abstract translation: 在基板上形成膜体声波谐振器。 膜体声波谐振器包括具有靠近衬底的第一表面的压电材料层和远离衬底的第二表面。 沉积在压电材料的第一表面上的第一导电层包括具有与与第二部分相关联的表面不同的平面上的表面的第一部分。

公开(公告)号：US20030112097A1

公开(公告)日：2003-06-19

申请号：US10109811

申请日：2002-03-28

Applicant: Intel Corporation

Inventor： Qing Ma ,  Li-Peng Wang ,  Valluri Rao

IPC: H03H009/56

CPC classification number: H03H9/172 ,  H03H3/02 ,  H03H9/586 ,  Y10T29/42

Abstract: A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

Abstract translation: 在具有主表面的基板上形成膜体声波谐振器。 薄膜体声波谐振器包括细长的叠层。 细长堆叠包括一层位于压电材料层的第一表面上的第一导电层和沉积在该压电材料层的第二表面上的第二导电层之间的压电材料。 细长的堆叠被定位成相对于基底的主表面基本垂直。 第一和第二导电层基本上同时并在一个处理步骤中放置在压电材料层上。 衬底的主表面处于水平面，膜体声波谐振器的堆叠处于基本垂直的平面。 形成的谐振器结构可以用作谐振器或滤波器。