公开(公告)号：US20220246526A1

公开(公告)日：2022-08-04

申请号：US17597907

申请日：2019-07-31

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Gang Zhang ,  Zonglang Huo

IPC: H01L23/528 ,  H01L23/535 ,  H01L21/768

Abstract: There is provided an L-shaped stepped word line structure, a method of manufacturing the same, and a three-dimensional memory. the word line structure includes: a plurality of L-shaped word line units, wherein each L-shaped word line unit includes a long side extending in a second direction and arranged adjacent to a gate line slit, and a short side extending in a first direction and including a word line terminal; wherein the word line terminal is formed in a stepped stacked layer structure including a plurality of stacked layer pairs formed of an insulating material, a region close to the gate line slit in a stacked layer of each stacked layer pair serves as a replacement metal region, the replacement metal region includes a short side region surface metal layer located on a surface and a short side region internal metal layer located in an interior, a length of the short side region surface metal layer in the first direction is greater than that of the short side region internal metal layer in the first direction, and the word line terminal corresponds to the short side region surface metal layer. It may be ensured that even if the etching is excessive in a case that the etching selection ratio is not high enough, a word line short circuit may not occur.

公开(公告)号：US20220262818A1

公开(公告)日：2022-08-18

申请号：US17597926

申请日：2019-07-29

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Gang Zhang ,  Zongliang Huo

IPC: H01L27/11582

Abstract: A storage unit, a method of manufacturing the storage unit, and a three-dimensional memory. The storage unit includes: a first conductivity-type substrate; a channel layer stacked on the first conductivity-type substrate in a first direction; a second conductivity-type conduction layer including a first part and a second part that are connected, the first part being located between the first conductivity-type substrate and the channel layer, and the second part being formed in a via hole passing through the channel layer; a channel passage layer penetrating the channel layer and the first part in a negative direction of the first direction, and extending into an interior of the first conductivity-type substrate; and an insulating layer located in the channel layer and surrounding a periphery of the channel passage layer. The first conductivity-type substrate and the second conductivity-type conduction layer provide carriers required for reading and erasing operations, respectively.

公开(公告)号：US12120875B2

公开(公告)日：2024-10-15

申请号：US17597926

申请日：2019-07-29

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Gang Zhang ,  Zongliang Huo

IPC: H10B43/27

CPC classification number: H10B43/27

Abstract: A storage unit, a method of manufacturing the storage unit, and a three-dimensional memory. The storage unit includes: a first conductivity-type substrate; a channel layer stacked on the first conductivity-type substrate in a first direction; a second conductivity-type conduction layer including a first part and a second part that are connected, the first part being located between the first conductivity-type substrate and the channel layer, and the second part being formed in a via hole passing through the channel layer; a channel passage layer penetrating the channel layer and the first part in a negative direction of the first direction, and extending into an interior of the first conductivity-type substrate; and an insulating layer located in the channel layer and surrounding a periphery of the channel passage layer. The first conductivity-type substrate and the second conductivity-type conduction layer provide carriers required for reading and erasing operations, respectively.

公开(公告)号：US12107046B2

公开(公告)日：2024-10-01

申请号：US17597907

申请日：2019-07-31

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Gang Zhang ,  Zongliang Huo

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/535

CPC classification number: H01L23/5283 ,  H01L21/76805 ,  H01L21/76816 ,  H01L21/76895 ,  H01L23/535

Abstract: Provided is an L-shaped stepped word line structure including: L-shaped word line units, each including a long side extending in a second direction and arranged adjacent to a gate line slit, and a short side extending in a first direction. A word line terminal included in the short side is formed in a stepped stacked layer structure including stacked layer pairs formed of an insulating material, a region close to the gate line slit in a stacked layer of each stacked layer pair serves as a replacement metal region including a short side region surface/internal metal layer respectively located on a surface/in an interior. In a first direction, a length of the short side region surface metal layer is greater than that of the short side region internal metal layer, and the word line terminal corresponds to the short side region surface metal layer.