公开(公告)号：US20160093531A1

公开(公告)日：2016-03-31

申请号：US14619068

申请日：2015-02-11

Applicant: Innovative Micro Technology

Inventor： John C HARLEY ,  Zhimin J. Yao

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/288 ,  H01L21/02 ,  H01L21/84 ,  B81C1/00

CPC classification number: H01L21/76898 ,  B81C1/00301 ,  H01L21/7682 ,  H01L2224/02372 ,  H01L2224/05548

Abstract: A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an substantially continuous annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the substantially continuous annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate. The substantially continuous annulus may be interrupted by at least one tether which connects the silicon post to the silicon substrate. The tether may be formed of a thing isthmus of silicon, or some suitable insulating material.

Abstract translation: 公开了一种在硅衬底中形成硅通孔（TSV）的方法。 该方法包括在硅衬底的第一侧中形成硅柱作为基本上连续的环状空间，从与基本上连续的环的水平面相反的一侧去除材料，去除硅柱并用金属材料代替它，以形成 金属通过延伸穿过衬底的厚度。 基本上连续的环可被至少一个将硅柱连接到硅衬底的系绳中断。 系绳可以由硅的地峡或一些合适的绝缘材料形成。

公开(公告)号：US09324613B2

公开(公告)日：2016-04-26

申请号：US14619068

申请日：2015-02-11

Applicant: Innovative Micro Technology

Inventor： John C Harley ,  Zhimin J. Yao

IPC: H01L21/768 ,  H01L21/84 ,  B81C1/00 ,  H01L21/288 ,  H01L21/02 ,  H01L21/321

CPC classification number: H01L21/76898 ,  B81C1/00301 ,  H01L21/7682 ,  H01L2224/02372 ,  H01L2224/05548

Abstract: A method for forming through silicon vias (TSVs) in a silicon substrate is disclosed. The method involves forming a silicon post as an substantially continuous annulus in a first side of a silicon substrate, removing material from an opposite side to the level of the substantially continuous annulus, removing the silicon post and replacing it with a metal material to form a metal via extending through the thickness of the substrate. The substantially continuous annulus may be interrupted by at least one tether which connects the silicon post to the silicon substrate. The tether may be formed of a thing isthmus of silicon, or some suitable insulating material.

Abstract translation: 公开了一种在硅衬底中形成硅通孔（TSV）的方法。 该方法包括在硅衬底的第一侧中形成硅柱作为基本上连续的环状空间，从与基本上连续的环的水平面相反的一侧去除材料，去除硅柱并用金属材料代替它，以形成 金属通过延伸穿过衬底的厚度。 基本上连续的环可被至少一个将硅柱连接到硅衬底的系绳中断。 系绳可以由硅的地峡或一些合适的绝缘材料形成。