Measuring cell and measuring field comprising measuring cells of this type, use of a measuring and use of a measuring field
    1.
    发明申请
    Measuring cell and measuring field comprising measuring cells of this type, use of a measuring and use of a measuring field 有权
    测量电池和测量领域包括测量这种类型的电池,使用测量和使用测量领域

    公开(公告)号:US20040207384A1

    公开(公告)日:2004-10-21

    申请号:US10754909

    申请日:2004-01-09

    CPC classification number: G11C27/024 G01N27/4148 G01N33/48728

    Abstract: A measuring cell for recording an electrical potential of an analyte situated on the measuring cell. The measuring cell has a sensor, a layer arranged above the sensor and electrically insulating the analyte from the sensor, and an amplifier circuit connected to the sensor on a substrate and having an input stage containing a field-effect transistor or a bipolar transistor, the sensor being at least indirectly connected to a control terminal of the field-effect transistor or of the bipolar transistor. An operating point of the amplifier circuit is set by means of a voltage or a current applied at the control terminal of the field-effect transistor or of the bipolar transistor of the input stage of the amplifier circuit.

    Abstract translation: 用于记录位于测量池上的分析物的电位的测量单元。 测量单元具有传感器,布置在传感器上方并将分析物与传感器电绝缘的层,以及连接到衬底上的传感器并具有包含场效应晶体管或双极晶体管的输入级的放大器电路, 传感器至少间接连接到场效应晶体管或双极晶体管的控制端子。 放大器电路的工作点通过施加在场效应晶体管的控制端或放大器电路的输入级的双极晶体管的电压或电流来设定。

    Polymer transistor arrangement, integrated circuit arrangement and method for producing a polymer transistor arrangement
    3.
    发明申请
    Polymer transistor arrangement, integrated circuit arrangement and method for producing a polymer transistor arrangement 失效
    聚合物晶体管布置,集成电路布置和用于制造聚合物晶体管布置的方法

    公开(公告)号:US20040209394A1

    公开(公告)日:2004-10-21

    申请号:US10714536

    申请日:2003-11-13

    Inventor: Ralf Brederlow

    Abstract: The invention relates to a polymer transistor arrangement, an integrated circuit arrangement and a method for producing a polymer transistor arrangement. The polymer transistor arrangement contains a polymer transistor formed in and/or on a substrate. The polymer transistor contains a first source/drain region, a second source/drain region, a channel region between the first and second source/drain regions, a gate region and a gate-insulating layer between channel region and gate region. A drive circuit of the polymer transistor arrangement is set up in such a way that it provides the source/drain regions and the gate region with electrical potentials such that the junction between at least one of the source/drain regions and the channel region can be operated as a diode.

    Abstract translation: 本发明涉及一种聚合物晶体管装置,集成电路装置和一种用于制造聚合物晶体管装置的方法。 聚合物晶体管装置包含在衬底中和/或衬底上形成的聚合物晶体管。 聚合物晶体管包含第一源极/漏极区域,第二源极/漏极区域,第一和第二源极/漏极区域之间的沟道区域,沟道区域和栅极区域之间的栅极区域和栅极绝缘层。 聚合物晶体管布置的驱动电路被设置成使得源极/漏极区域和栅极区域具有电势,使得源极/漏极区域和沟道区域中的至少一个之间的结可以是 作为二极管工作。

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