知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

2 条记录 (耗时 0.014 秒)

    Methods of Fabricating Isolation Regions of Semiconductor Devices and Structures Thereof
    1.
    发明申请
    Methods of Fabricating Isolation Regions of Semiconductor Devices and Structures Thereof 审中-公开
    制造半导体器件及其结构的隔离区域的方法

    公开(公告)号：US20150137309A1

    公开(公告)日：2015-05-21

    申请号：US14559801

    申请日：2014-12-03

    申请人： Infineon Technologies AG

    发明人： Armin Tilke ,  Marcus Culmsee ,  Chris Stapelmann ,  Bee Kim Hong ,  Roland Hampp

    IPC分类号： H01L29/06 ,  H01L21/02

    CPC分类号： H01L29/0649 ,  H01L21/02271 ,  H01L21/76229 ,  H01L21/76232

    摘要： Methods of fabricating isolation regions of semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a semiconductor device includes a workpiece and at least one trench formed in the workpiece. The at least one trench includes sidewalls, a bottom surface, a lower portion, and an upper portion. A first liner is disposed over the sidewalls and the bottom surface of the at least one trench. A second liner is disposed over the first liner in the lower portion of the at least one trench. A first insulating material is disposed over the second liner in the lower portion of the at least one trench. A second insulating material is disposed over the first insulating material in the upper portion of the at least one trench. The first liner, the second liner, the first insulating material, and the second insulating material comprise an isolation region of the semiconductor device.

    摘要翻译： 公开了制造半导体器件的隔离区域的方法及其结构。 在优选实施例中，半导体器件包括工件和形成在工件中的至少一个沟槽。 所述至少一个沟槽包括侧壁，底面，下部和上部。 第一衬垫设置在所述至少一个沟槽的侧壁和底表面上。 第二衬垫设置在至少一个沟槽的下部中的第一衬垫之上。 第一绝缘材料设置在至少一个沟槽的下部中的第二衬垫上。 第二绝缘材料设置在至少一个沟槽的上部中的第一绝缘材料之上。 第一衬垫，第二衬垫，第一绝缘材料和第二绝缘材料包括半导体器件的隔离区域。