公开(公告)号：US20230350309A1

公开(公告)日：2023-11-02

申请号：US18137131

申请日：2023-04-20

申请人： Infineon Technologies AG

发明人： Detlef Hofmann ,  Heiko Aßmann

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033

CPC分类号： G03F7/70541 ,  H01L21/0275 ,  H01L21/31144 ,  H01L21/0337

摘要： A method of generating chip-specific identification code marks on semiconductor chips includes patterning a resist layer over a semiconductor wafer by laser direct image exposure, the patterning including writing chip-specific identification codes into the resist layer over chip areas of the semiconductor wafer. The patterned resist layer is then developed.

公开(公告)号：US10468248B2

公开(公告)日：2019-11-05

申请号：US15485232

申请日：2017-04-12

申请人： Infineon Technologies AG

发明人： Heiko Aßmann ,  Felix Braun ,  Marcus Dankelmann ,  Stefan Doering ,  Karsten Friedrich ,  Udo Goetschkes ,  Andreas Greiner ,  Ralf Rudolf ,  Jens Schneider

IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/027 ,  H01L21/266 ,  H01L21/268 ,  H01L21/324 ,  H01L29/06

摘要： In various embodiments, a method is provided. The method may include forming a buried electrically charged region at a predefined position in a first layer in such a way that the buried electrically charged region generates an electric field having a lateral inhomogeneous field distribution above the first layer, and forming a second layer above the first layer using the field distribution in such a way that a structure of the second layer correlates with the position of the buried electrically charged region.