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公开(公告)号:US10803900B2
公开(公告)日:2020-10-13
申请号:US14517848
申请日:2014-10-18
申请人: INTRINSIC ID B.V.
摘要: The present invention relates to a method of enabling authentication of an information carrier, the information carrier comprising a writeable part and a physical token arranged to supply a response upon receiving a challenge, the method comprising the following steps; applying a first challenge to the physical token resulting in a first response, and detecting the first response of the physical token resulting in a detected first response data, the method being characterized in that it further comprises the following steps; forming a first authentication data based on information derived from the detected first response data, signing the first authentication data, and writing the signed authentication data in the writeable part of the information carrier. The invention further relates to a method of authentication of an information carrier, as well as to devices for both enabling authentication as well as authentication of an information carrier.
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公开(公告)号:US11183083B2
公开(公告)日:2021-11-23
申请号:US16306459
申请日:2017-05-18
申请人: Intrinsic ID B.V.
发明人: Geert Jan Schrijen , Pim Theo Tuyls
摘要: Some embodiments are directed to a cryptographic device, including a non-volatile memory, a range of the memory storing data, a selector arranged to receive a selector signal configuring a memory read-out unit for a regular read-out mode or for a PUF read-out mode of the same memory, a control unit arranged to send the selector signal to the selector configuring the memory read-out unit in the regular read-out mode, and reading the memory range to obtain the data, and send the selector signal to the selector configuring the memory read-out unit for PUF read-out mode and obtaining a noisy bit string from the memory range.
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公开(公告)号:US10910079B2
公开(公告)日:2021-02-02
申请号:US16099522
申请日:2017-04-28
申请人: INTRINSIC ID B.V.
摘要: A programming device (110) arranged to obtain and store a random bit string in a memory device (100), the memory device (100) comprising multiple one-time programmable memory cells (122), a memory cell having a programmed state and a not-programmed state, the memory cell being one-time programmable by changing the state from the not-programmed state to the programmed state through application of an electric programming energy to the memory cell.
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