公开(公告)号：US11223013B2

公开(公告)日：2022-01-11

申请号：US16489266

申请日：2017-02-28

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Qi Liu ,  Xiaolong Zhao ,  Sen Liu ,  Ming Liu ,  Hangbing Lv ,  Shibing Long ,  Yan Wang ,  Facai Wu

IPC分类号： H01L45/00

摘要： The present disclosure provides a conductive bridge semiconductor device and a method of manufacturing the same. The conductive bridge semiconductor device includes a lower electrode, a resistive switching functional layer, an ion barrier layer and an active upper electrode from bottom to top, wherein the ion barrier layer is provided with certain holes through which active conductive ions pass. Based on this structure, the precise designing of the holes on the barrier layer facilitates the modulation of the quantity, size and density of the conduction paths in the conductive bridge semiconductor device, which enables that the conductive bridge semiconductor device can be modulated to be a nonvolatile conductive bridge resistive random access memory or a volatile conductive bridge selector. Based on the above method, ultra-low power nonvolatile conductive bridge memory and high driving-current volatile conductive bridge selector with controllable polarity are completed.