公开(公告)号：US11791627B2

公开(公告)日：2023-10-17

申请号：US17863128

申请日：2022-07-12

Applicant: Huawei Technologies Co., Ltd.

Inventor： Qimeng Jiang ,  Yushan Li ,  Hanxing Wang

IPC: H02H9/04

CPC classification number: H02H9/046

Abstract: An ESD protection circuit is provided, including a negative ESD protection module and a positive ESD protection module, where the negative ESD protection module includes a first resistor, a charging capacitor, a first field effect transistor, and a second field effect transistor, and the positive ESD protection module includes a fourth field effect transistor. When a negative ESD event occurs, there is a comparatively large transient voltage at a gate of a P-type enhanced GaN power device relative to a source of the P-type enhanced GaN power device. Therefore, a displacement current from the source to the gate of the P-type enhanced GaN power device is generated on the charging capacitor. A voltage drop generated by the displacement current on the first resistor may enable the first field effect transistor and the second field effect transistor to form a path when the first field effect transistor is turned on.

公开(公告)号：US11411396B2

公开(公告)日：2022-08-09

申请号：US17211515

申请日：2021-03-24

Applicant: Huawei Technologies Co., Ltd.

Inventor： Qimeng Jiang ,  Yushan Li ,  Hanxing Wang

IPC: H02H9/04

Abstract: An ESD protection circuit is provided, including a negative ESD protection module and a positive ESD protection module, where the negative ESD protection module includes a first resistor, a charging capacitor, a first field effect transistor, and a second field effect transistor, and the positive ESD protection module includes a fourth field effect transistor. When a negative ESD event occurs, there is a comparatively large transient voltage at a gate of a P-type enhanced GaN power device relative to a source of the P-type enhanced GaN power device. Therefore, a displacement current from the source to the gate of the P-type enhanced GaN power device is generated on the charging capacitor. A voltage drop generated by the displacement current on the first resistor may enable the first field effect transistor and the second field effect transistor to form a path when the first field effect transistor is turned on.

公开(公告)号：US20210408901A1

公开(公告)日：2021-12-30

申请号：US17473309

申请日：2021-09-13

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yushan Li

IPC: H02M3/07 ,  H02M1/00

Abstract: A method includes configuring a switched capacitor converter to operate in a switching mode and configuring the switched capacitor converter to enter into a bypass mode after applying a charging mode to the switched capacitor converter, wherein as a result of applying the charging mode, the switched capacitor converter has a smooth transition from the switching mode to the bypass mode.

公开(公告)号：US20210091679A1

公开(公告)日：2021-03-25

申请号：US16926516

申请日：2020-07-10

Applicant: Huawei Technologies Co., Ltd.

Inventor： Yushan Li ,  Heping Dai ,  Dianbo Fu

IPC: H02M7/217

Abstract: A system includes a current-mode switcher configured to provide a direct current (DC) voltage for a noise sensitive load, and a linear amplifier connected to an output of the current-mode switcher, the linear amplifier configured to draw a reduced supply voltage through at least one power conversion device that is coupled between a power source and the linear amplifier.