公开(公告)号：US09209312B2

公开(公告)日：2015-12-08

申请号：US13958578

申请日：2013-08-04

申请人： Hitachi Metals, Ltd.

发明人： Hironori Wakana ,  Hiroyuki Uchiyama ,  Hideko Fukushima

IPC分类号： H01L29/10 ,  H01L21/28 ,  H01L29/786 ,  C23C14/08 ,  H01L21/02 ,  C23C14/34 ,  H01L27/32

摘要： There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ΔVth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

公开(公告)号：US09837543B2

公开(公告)日：2017-12-05

申请号：US14783435

申请日：2014-04-10

申请人： Hitachi Metals, LTD.

发明人： Hiroyuki Uchiyama ,  Hideko Fukushima

IPC分类号： H01L29/10 ,  H01L29/786 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02

CPC分类号： H01L29/7869 ,  C23C14/08 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631

摘要： The invention provides an oxide semiconductor target including an oxide sintered body including zinc, tin, oxygen, and aluminum in a content ratio of from 0.005% by mass to 0.2% by mass with respect to the total mass of the oxide sintered body, in which the content ratio of silicon to the total mass of the oxide sintered body is less than 0.03% by mass.

公开(公告)号：US20140042431A1

公开(公告)日：2014-02-13

申请号：US13958578

申请日：2013-08-04

申请人： Hitachi Metals, Ltd.

发明人： Hironori Wakana ,  Hiroyuki Uchiyama ,  Hideko Fukushima

IPC分类号： H01L29/786 ,  C23C14/08

CPC分类号： H01L29/7869 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/3244

摘要： There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ΔVth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

摘要翻译： 提供能够获得阈值电压（Vth）（PDS和NBIS中的±3V范围内的阈值电压偏移量DeltaVth）和5cm 2 / Vs以上的场效应迁移率的稳定性的氧化物半导体材料 用于OLED显示装置的操作。 一种氧化物半导体靶，其中具有5质量％过渡金属的W，Ta和Hf的一种或多种氧化物的氧化物半导体材料分别添加0.07〜3.8原子％，0.5〜4.7原子％，0.32〜6.4原子％ 以Zn-Sn-O为主要成分的半导体材料被烧结; 通过使用靶材形成的半导体沟道层，以及用于TFT保护膜的氧化物半导体材料以及具有该半导体通道层的半导体器件。

公开(公告)号：US09240490B2

公开(公告)日：2016-01-19

申请号：US13958578

申请日：2013-08-04

申请人： Hitachi Metals, Ltd.

发明人： Hironori Wakana ,  Hiroyuki Uchiyama ,  Hideko Fukushima

IPC分类号： H01L29/10 ,  H01L21/28 ,  H01L29/786 ,  C23C14/08 ,  H01L21/02 ,  C23C14/34 ,  H01L27/32

摘要： There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ΔVth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

公开(公告)号：US09276123B2

公开(公告)日：2016-03-01

申请号：US13958578

申请日：2013-08-04

申请人： Hitachi Metals, Ltd.

发明人： Hironori Wakana ,  Hiroyuki Uchiyama ,  Hideko Fukushima

IPC分类号： H01L29/10 ,  H01L21/28 ,  H01L29/786 ,  C23C14/08 ,  H01L21/02 ,  C23C14/34 ,  H01L27/32

CPC分类号： H01L29/7869 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/3244

摘要： There are provided an oxide semiconductor material, capable of attaining stability of a threshold voltage (Vth) (threshold voltage shift amount ΔVth within a range of ±3 V in PDS and NBIS) and field-effect mobility of 5 cm2/Vs or more necessary for the operation of an OLED display device. An oxide semiconductor target in which an oxide semiconductor material with one or more of oxides of W, Ta, and Hf of 5d transition metal added each by 0.07 to 3.8 at %, 0.5 to 4.7 at %, and 0.32 to 6.4 at % to a semiconductor material with Zn—Sn—O as a main ingredient is sintered; a semiconductor channel layer formed by using the target, and an oxide semiconductor material for TFT protective film, as well as a semiconductor device having the same.

摘要翻译： 提供能够获得阈值电压（Vth）（阈值电压偏移量＆amp; Dgr;在PDS和NBIS的±3V范围内的Vth）和5cm 2 / Vs的场效应迁移率的稳定性的氧化物半导体材料，或 对于OLED显示装置的操作更为必要。 一种氧化物半导体靶，其中具有5质量％过渡金属的W，Ta和Hf的一种或多种氧化物的氧化物半导体材料分别添加0.07〜3.8原子％，0.5〜4.7原子％，0.32〜6.4原子％ 以Zn-Sn-O为主要成分的半导体材料被烧结; 通过使用靶材形成的半导体沟道层，以及用于TFT保护膜的氧化物半导体材料以及具有该半导体通道层的半导体器件。