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    Method of manufacturing semiconductor device using meander-shaped heating element
    1.
    发明授权
    Method of manufacturing semiconductor device using meander-shaped heating element 有权
    制造使用曲折形加热元件的半导体器件的方法

    公开(公告)号：US09449849B2

    公开(公告)日：2016-09-20

    申请号：US14330028

    申请日：2014-07-14

    申请人： HITACHI KOKUSAI ELECTRIC INC.

    发明人： Hitoshi Murata ,  Tetsuya Kosugi ,  Shinobu Sugiura

    IPC分类号： H01L21/00 ,  H01L21/324 ,  H01L21/67

    CPC分类号： H01L21/324 ,  H01L21/67109

    摘要： Provided is a method of manufacturing a semiconductor device using a heating device capable of suppressing shearing of a holder due to thermal deformation of the heating element included in the heating device. The method includes: loading a substrate into a process chamber surrounded by a heating device including a heating element; and increasing temperature of the heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape with both ends thereof being fixed to an insulating body installed at an outer circumference of the heating element wherein the heating element is fixed to the insulating body by a holding body disposed in a holding body receiving part installed at end of the valley part having a cutout part having a width larger than that of the valley part to heat the substrate in the process chamber.

    摘要翻译： 提供一种使用加热装置的半导体器件的制造方法，该加热装置能够抑制由于加热装置中包含的加热元件的热​​变形而导致的保持器的剪切。 该方法包括：将基板装载到由包括加热元件的加热装置包围的处理室中; 并且加热元件的温度升高包括多个交替连接的山部和谷部，以形成曲折形状，其两端固定在安装在加热元件的外周的绝缘体上，其中加热元件固定到 所述绝缘体由设置在所述谷部的端部处的保持体容纳部中的保持体，所述保持体接纳部具有宽度大于所述谷部的宽度的切口部，以对所述处理室中的基板进行加热。

    Substrate processing apparatus, heater and method of manufacturing semiconductor device
    2.
    发明授权
    Substrate processing apparatus, heater and method of manufacturing semiconductor device 有权

    公开(公告)号：US10597780B2

    公开(公告)日：2020-03-24

    申请号：US15673159

    申请日：2017-08-09

    申请人： Hitachi Kokusai Electric Inc.

    发明人： Hitoshi Murata ,  Takashi Yahata ,  Yuichi Wada ,  Takatomo Yamaguchi ,  Shuhei Saido

    IPC分类号： C23C16/46 ,  H01L21/31 ,  H01L21/02 ,  H01L21/67 ,  H01L21/673

    摘要： Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; an upright cylindrical process vessel; a seal cap configured to cover an opening at a lower end of the process vessel; a first heater configured to heat an inside of the process vessel from a lateral side thereof; an insulating unit disposed between the seal cap and the wafer retainer; and a second heater facing at least one of the plurality of wafers and configured to heat the at least one of the plurality of wafers, the second heater including: a pillar penetrating centers of the seal cap and the insulating unit; an annular member connected to and concentric with the pillar; a pair of connecting parts connecting end portions of the annular member to the pillar; and a heating element disposed inside the annular member.

    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件的方法

    公开(公告)号：US20140322926A1

    公开(公告)日：2014-10-30

    申请号：US14330028

    申请日：2014-07-14

    申请人： HITACHI KOKUSAI ELECTRIC INC.

    发明人： Hitoshi Murata ,  Tetsuya Kosugi ,  Shinobu Sugiura

    IPC分类号： H01L21/324

    CPC分类号： H01L21/324 ,  H01L21/67109

    摘要： Provided is a method of manufacturing a semiconductor device using a heating device capable of suppressing shearing of a holder due to thermal deformation of the heating element included in the heating device. The method includes: loading a substrate into a process chamber surrounded by a heating device including a heating element; and increasing temperature of the heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape with both ends thereof being fixed to an insulating body installed at an outer circumference of the heating element wherein the heating element is fixed to the insulating body by a holding body disposed in a holding body receiving part installed at end of the valley part having a cutout part having a width larger than that of the valley part to heat the substrate in the process chamber.

    摘要翻译： 提供一种使用加热装置的半导体器件的制造方法，该加热装置能够抑制由于加热装置中包含的加热元件的热​​变形而导致的保持器的剪切。 该方法包括：将基板装载到由包括加热元件的加热装置包围的处理室中; 并且加热元件的温度升高包括多个交替连接的山部和谷部，以形成曲折形状，其两端固定在安装在加热元件的外周的绝缘体上，其中加热元件固定到 所述绝缘体由设置在所述谷部的端部处的保持体容纳部中的保持体，所述保持体接纳部具有宽度大于所述谷部的宽度的切口部，以对所述处理室中的基板进行加热。