公开(公告)号：US20250149288A1

公开(公告)日：2025-05-08

申请号：US18835838

申请日：2022-03-01

Applicant: Hitachi High-Tech Corporation

Inventor： Naohiro FUJITA ,  Hisayuki TAKASU ,  Atsushi KAMINO ,  Hitoshi KAMOSHIDA

IPC: H01J37/244 ,  G01N23/2251 ,  H01J37/20 ,  H01J37/305

Abstract: An ion milling device includes: a first monitoring mechanism that measures an amount of sputtered particles generated by irradiating a sample with an ion beam; and a second monitoring mechanism that images a processed surface of the sample formed by irradiating the sample with the ion beam, in which processing on the sample ends when a sputtering amount of the sample estimated through measurement by the first monitoring mechanism and a shape of the processed surface image extracted from a picture captured by the second monitoring mechanism satisfy processing end conditions set for the sputtering amount and the shape of the processed surface.