公开(公告)号：US20250014907A1

公开(公告)日：2025-01-09

申请号：US18896372

申请日：2024-09-25

Applicant: Hitachi High-Tech Corporation

Inventor： Takashi HATTORI ,  Yu ZHAO ,  Hiroyuki KOBAYASHI ,  Hiroto OTAKE

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67

Abstract: Provided is an etching method for etching a silicon oxide film with a high accuracy at a high selection ratio with respect to a silicon nitride film, the etching method of etching a film structure, in which an end portion of a film layer in which the silicon oxide film and the silicon nitride film formed in advance on a wafer disposed in a processing chamber are alternately stacked in a vertical direction forms a side wall of a groove or a hole, by supplying processing gas into the processing chamber includes a step of supplying hydrogen fluoride and alcohol vapor into the processing chamber, maintaining the wafer at a temperature of −20° C. or lower, preferably −20° C. to −60° C., and etching the silicon oxide film from the end portion in a lateral direction.

公开(公告)号：US20230386793A1

公开(公告)日：2023-11-30

申请号：US17912943

申请日：2021-02-19

Applicant: HITACHI HIGH-TECH CORPORATION

Inventor： Yosuke KUROSAKI ,  Kenji MAEDA ,  Hiroto OTAKE

IPC: H01J37/32 ,  H01L21/311

CPC classification number: H01J37/3244 ,  H01L21/31116 ,  H01J37/32834 ,  H01J2237/334

Abstract: Provided are an etching method and an etching apparatus that allow etching processing of a silicon nitride film to be performed at a high etching rate, while maintaining high processing dimension controllability at an atomic layer level, high uniformity in a pattern depth direction, and high selectivity to silicon dioxide. An etching method includes a first step of supplying an etchant containing hydrogen to a sample having a surface at which a silicon nitride is exposed to form a first modified layer in which the hydrogen is bonded to the silicon nitride, a second step of supplying an etchant containing fluorine to the sample to form, over the first modified layer, a second modified layer in which the hydrogen and the fluorine are bonded to the silicon nitride, and a third step of irradiating the first modified layer and the second modified layer with an infrared ray.