公开(公告)号：US20230377836A1

公开(公告)日：2023-11-23

申请号：US18027501

申请日：2020-09-28

Applicant: Hitachi High-Tech Corporation

Inventor： Azusa KONNO ,  Takashi SHIDARA ,  Ichiro FUJIMURA ,  Daiji KIRIHATA ,  Hiromi MISE

IPC: H01J37/22 ,  H01J37/244

CPC classification number: H01J37/222 ,  H01J37/244 ,  H01J2237/24578 ,  H01J2237/2448

Abstract: Depth information of a multilayer structure is acquired quickly and with high accuracy. An analysis system includes (a) acquiring a first captured image of a sample SAM viewed from a first direction by irradiating the sample SAM including a multilayer structure with an electron beam EB1 from the first direction, (b) acquiring a second captured image of the sample SAM viewed from a second direction by irradiating the sample SAM with the electron beam EB1 from the second direction, in which the second direction intersects the first direction, (c) acquiring depth information of the multilayer structure using information of the sample SAM including the first captured image, the second captured image, a number of layers of the multilayer structure, a thickness of one layer or a thickness of each layer of the multilayer structure, and a depth at which a first layer of the multilayer structure starts.