公开(公告)号：US5191298A

公开(公告)日：1993-03-02

申请号：US795432

申请日：1991-11-21

Applicant: Hiroyuki Funahashi ,  Chung C. San

Inventor： Hiroyuki Funahashi ,  Chung C. San

IPC: H03F3/34 ,  H03F1/30 ,  H03F3/45 ,  H03F3/68

CPC classification number: H03F3/68 ,  H03F1/302 ,  H03F3/45479

Abstract: A isolation amplifier circuit comprises: an operation amplifier provided with a first and second input terminals, an output terminal, and a feedback resistor for connecting the output terminal and second input terminal; a first emitter follower, for inputting a signal, connected to the first input terminal; a second emitter follower connected between the output terminal and the feedback resistor; a third emitter follower connected between the second input terminal and a first ground impedance; and a fourth emitter follower connected between the first input terminal and a second ground impedance. In the isolation circuit, dynamic resistances of the first, second, third, and fourth emitter followers are made identical with one another.

公开(公告)号：US5416357A

公开(公告)日：1995-05-16

申请号：US991248

申请日：1992-12-16

Applicant: Masato Kobayashi ,  Chung C. San

Inventor： Masato Kobayashi ,  Chung C. San

IPC: H01L21/822 ,  H01L27/04 ,  H01L27/08 ,  H01L27/02

CPC classification number: H01L27/0802

Abstract: A semiconductor integrated circuit device is provided with, in a land formed on a semiconductor substrate, a plurality of resistor layers constituted by semiconductor layers of a conductive type reverse to that of the land, and two of the plurality of the resistor layers are connected in series between a supply voltage and a reference potential. The land of the reference potential side resistor layer of the resistor layers connected in series is formed separately from the lands of the other resistor layers, and a voltage lower than a voltage applied to the other resistor layers is applied to the reference potential side resistor layer.

Abstract translation: 半导体集成电路器件在形成在半导体衬底上的焊盘中设置有多个由与焊盘相反的导电类型的半导体层构成的电阻层，并且多个电阻层中的两个连接在 串联在电源电压和参考电位之间。 串联连接的电阻层的参考电位侧电阻层的焊盘与其他电阻层的焊盘分离地形成，并且施加于其他电阻层的电压低于基准电位侧电阻层 。