公开(公告)号：US20060240647A1

公开(公告)日：2006-10-26

申请号：US11279977

申请日：2006-04-17

申请人： Hiroshi MITSUHASHI ,  Naoya Ito

发明人： Hiroshi MITSUHASHI ,  Naoya Ito

IPC分类号： H01L21/20 ,  B23K26/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/67207 ,  H01L21/67253 ,  H01L27/1214 ,  H01L27/1255

摘要： The surface of an amorphous silicon film formed on a glass substrate is cleaned by hydrofluoric acid in a spin clean unit. The glass substrate is conveyed to a waiting unit where the glass substrate is made to wait for about 15 minutes. Active fluoride adhered on the amorphous silicon film is sublimated. The glass substrate in which the active fluoride is sublimated is conveyed into a laser annealing device where the amorphous silicon film is excimer laser annealed to reform the amorphous silicon film into a polysilicon film. The residuals of the charges in the polysilicon film generated by excimer laser annealing the surface of the amorphous silicon film with the active fluoride adhered to the surface of the amorphous silicon film can be prevented. A thin film transistor having desired TFT characteristics can be manufactured.

摘要翻译： 形成在玻璃基板上的非晶硅膜的表面在旋转清洁单元中用氢氟酸清洗。 将玻璃基板输送到等待单元的玻璃基板等待约15分钟。 活性氟附着在非晶硅膜上升华。 将活性氟化物升华的玻璃基板输送到激光退火装置中，其中非晶硅膜被激光退火激光退火，以将非晶硅膜重整成多晶硅膜。 可以防止通过受激准分子激光退火产生的多晶硅膜中的电荷残留物，其中非活性氟化物附着在非晶硅膜的表面上。 可以制造具有期望的TFT特性的薄膜晶体管。