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    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体激光器件及其制造方法

    公开(公告)号：US20090129418A1

    公开(公告)日：2009-05-21

    申请号：US12274101

    申请日：2008-11-19

    申请人： Hiroaki MATSUMURA

    发明人： Hiroaki MATSUMURA

    IPC分类号： H01S5/00 ,  H01L21/00

    CPC分类号： H01S5/227 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2275 ,  H01S5/32341 ,  H01S2301/18

    摘要： A method for manufacturing a semiconductor laser device includes forming a laminate having a semiconductor layer of a first conductivity type, an active layer and a semiconductor layer of a second conductivity type. The waveguide region is formed to guide light perpendicular to the direction of width by restricting the light from spreading in the direction of width in the active layer, such that the semiconductor laser device has a first waveguide region and a second waveguide region. The first waveguide region is formed to confine light within the limited active layer by means of a difference in the refractive index between the active layer and the regions on both sides of the active layer by limiting the width of the active layer. In forming the second waveguide region, light is confined therein by providing effective difference in refractive index in the active layer.

    摘要翻译： 一种制造半导体激光器件的方法包括形成具有第一导电类型的半导体层，有源层和第二导电类型的半导体层的层压体。 波导区域被形成为通过限制光在有源层中的宽度方向上的扩散来引导垂直于宽度方向的光，使得半导体激光器件具有第一波导区域和第二波导区域。 第一波导区域被形成为通过限制有源层的宽度，借助于有源层与有源层两侧上的区域之间的折射率的差异将光限制在有限的有源层内。 在形成第二波导区域时，通过在有源层中提供有效的折射率差异将光限制在其中。

    Semiconductor Light Emitting Device and Method for Fabricating the Same
    3.
    发明申请
    Semiconductor Light Emitting Device and Method for Fabricating the Same 有权
    半导体发光装置及其制造方法

    公开(公告)号：US20090008668A1

    公开(公告)日：2009-01-08

    申请号：US12166940

    申请日：2008-07-02

    申请人： Hiroaki MATSUMURA

    发明人： Hiroaki MATSUMURA

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/387 ,  H01L33/44

    摘要： A semiconductor light emitting device, which includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; a semiconductor light emitting portion having a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first conductivity-type semiconductor side electrode connected to the first conductivity-type semiconductor layer; and a second conductivity-type semiconductor side electrode connected to the second conductivity-type semiconductor layer, wherein the second conductivity-type semiconductor side electrode is disposed separated from an insulator film covering the semiconductor light emitting portion by a separation area.

    摘要翻译： 一种半导体发光器件，其包括：第一导电型半导体层; 第二导电型半导体层; 半导体发光部分，具有设置在第一导电型半导体层和第二导电型半导体层之间的发光层; 连接到第一导电型半导体层的第一导电型半导体侧电极; 以及连接到第二导电型半导体层的第二导电型半导体侧电极，其中第二导电型半导体侧电极通过分离区域与覆盖半导体发光部分的绝缘膜分离设置。