摘要:
A chromaticity meter measures chromaticity of light output for each of picture elements selected. Calculated from the measurement is corrective data on each of RGB colors, which in turn used to calculate corrective data on each of RGB at unselected picture elements. In this method, original video signals for each of RGB colors will be correctively modulated based on the thus obtained corrective data. A projected image displaying apparatus is constructed such that adjustment of chromaticity as to white as well as to black from the measurement by the chromaticity meter of chromaticity throughout the entire image, is carried out uniformly and reliably by automatic control using a microcomputer so as to determine optimal condition for correctively modulating the original video signal. This apparatus further includes means for storing the thus obtained optimal condition in a non-volatile memory.
摘要:
A physical analysis (S2) of the elements used in an ESD protection circuit is performed; parameters of the elements that have a comparatively large effect on ESD protection characteristics are extracted as key parameters (S4); and a mixed-mode device-circuit simulation of the ESD protection circuit is performed, using the key parameters, to optimize the key parameters (S5). This can shorten the time required for designing an ESD circuit.
摘要:
In a profile extraction method, a long channel profile is first extracted through an initial profile generating stage and a long channel profile extraction stage. In a following two-dimensional profile extraction stage, a two-dimensional channel profile extraction stage and a source/drain profile extraction stage are repeated to extract an optimized two-dimensional channel profile and an optimized source/drain profile. In the two-dimensional channel profile extraction stage, a two-dimensional channel profile is extracted from the gate length dependency of the threshold voltage. In addition, in the source/drain profile extraction stage, a source/drain profile is extracted from the substrate bias voltage dependency of the threshold voltage—gate length characteristics.
摘要:
An electrodeposition coating composition containing blocked isocyanate groups comprising at least one dialkyltin aromatic carboxylic acid salt represented by the following formula ##STR1## wherein R represents an alkyl group having 1 to 12 carbon atoms, and R.sup.1 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
摘要:
The present invention provides a cationic electrodeposition coating composition comprising: a specific amino group-containing modified epoxy resin (A); a blocked polyisocyanate curing agent (B); a water-soluble zirconium compound (C); and sulfamic acid, wherein the water-soluble zirconium compound (C) is present in an amount of 10 to 10,000 ppm, calculated as the mass of the elemental zirconium, relative to the mass of the cationic electrodeposition coating composition.
摘要:
A pile fabric having a ground structure portion having a knitted or woven structure comprising organic fiber yarns and a cut pile portion comprising cut piles knitted or woven in said ground structure and having a single fiber fineness of 0.1 to 2.0 dtex is woven or knitted, ant then subjected to a thermal treatment to thermally shrink the above-mentioned cut piles to obtain the pile fabric in which the cut pile density of the cut pile portion is in a range of 40,000 to 300,000 dtex/cm2 and the cut pile length of the cut piles is in a range of 0.20 to 2.00 mm. If necessary, said pile fabric is used to obtain a vehicle interior material.
摘要翻译:具有编织或编织结构的研磨结构部分的绒头织物包括有机纤维纱线和包括在所述研磨结构中编织或编织并且具有0.1至2.0分特的单纤维细度的切割绒头的切割绒头部分被编织或编织 然后进行热处理以热收缩上述切割桩,以获得绒头织物,其中切割绒头部分的绒毛绒毛密度在40,000至300,000dtex / cm 2的范围内。 切割桩的切割桩长度在0.20〜2.00mm的范围内。 如果需要,所述绒头织物用于获得车辆内部材料。
摘要:
A method for using a computer to calculate a pileup state of an impurity in an interface between an Si layer in which a source and a drain are formed, and an SiO2 layer brought in contact with the Si layer at a high speed, wherein data is first set assuming that the Si layer is constituted of a plurality of cells. Subsequently, the impurity is moved to a pileup position of the interface from each cell, and an amount of impurity piled up in each pileup position of the interface is calculated. In this case, a mass of the impurity moving to the interface from each cell is determined as a function of a distance to each pileup position from each cell, and a distance to a source or a drain closest to the cell.
摘要:
A physical analysis (S2) of the elements used in an ESD protection circuit is performed; parameters of the elements that have a comparatively large effect on ESD protection characteristics are extracted as key parameters (S4); and a mixed-mode device-circuit simulation of the ESD protection circuit is performed, using the key parameters, to optimize the key parameters (S5). This can shorten the time required for designing an ESD circuit.
摘要:
This invention concerns a method for forming a coating film on a metallic substrate by a multistage energization method at no less than two stages using an electrodeposition bath which comprises a water-based film-forming agent comprising zirconium compound and, as the base resin, an amino group-containing modified epoxy resin which is obtained through reaction of an epoxy resin with an amino group-containing compound, said epoxy resin having been obtained through reaction of a diepoxide compound, a bisphenol epoxy resin and bisphenols; whereby coated articles excelling in corrosion resistance are offered.
摘要:
A load driving device includes a drive control signal generation circuit generating a load drive control signal and a semiconductor buffer circuit generating an output signal in response to the load drive control signal. The buffer circuit has a pair of gate driven switching elements which are connected to each other in push-pull configuration and driven at their gate terminals by the load drive control signal. The buffer circuit has an output terminal which is connected to a connection point between ends of controlled electrodes of the gate driven switching elements, and a power source terminal and a ground connection terminal respectively connected to the remaining ends of the other controlled electrodes of the gate driven switching elements. A ground connection side element of a pair of gate driven switching elements has a set of MOS transistors which are connected across the connection point and the ground connection terminal.