公开(公告)号：US20070160512A1

公开(公告)日：2007-07-12

申请号：US10587266

申请日：2005-01-25

申请人： Tadahiro Ohmi ,  Hideharu Hasegawa ,  Yoshio Ishihara ,  Katsumasa Suzuki

发明人： Tadahiro Ohmi ,  Hideharu Hasegawa ,  Yoshio Ishihara ,  Katsumasa Suzuki

IPC分类号： B01D53/68 ,  B01J19/08 ,  B01J19/12

CPC分类号： B01J19/088 ,  B01J2219/0883 ,  B01J2219/0892 ,  B01J2219/0894

摘要： In the exhaust gas treatment method of the present invention, exhaust gas in an excited state in semiconductor device production equipment is introduced into a plasma treatment unit of a treatment unit under reduced pressure, introduced into a reactor of a reaction removal unit while maintained in an excited state by plasma generated in the plasma treatment unit, and is reacted with a reaction remover composed of particulate calcium oxide filled into the reactor to remove harmful gas components in the exhaust gas. Exhaust gas may also be reacted with the reaction remover after having degraded the harmful gas components by oxidative degradation in the presence of plasma by supplying oxygen to the plasma treatment unit.

摘要翻译： 在本发明的排气处理方法中，将半导体装置制造装置中的处于激发状态的废气在减压下导入处理装置的等离子体处理装置，同时将其导入反应除去装置的反应器，同时保持在 在等离子体处理单元中产生的等离子体产生激发态，并与填充到反应器中的颗粒状氧化钙组成的反应去除剂反应，以除去废气中的有害气体成分。 在通过向等离子体处理单元供给氧之后，在等离子体存在下，通过氧化降解而使有害气体成分降解后，废气也可与反应去除剂反应。

公开(公告)号：US20070154372A1

公开(公告)日：2007-07-05

申请号：US10586960

申请日：2005-01-25

申请人： Hideharu Hasegawa ,  Yoshio Ishihara ,  Katsumasa Suzuki

发明人： Hideharu Hasegawa ,  Yoshio Ishihara ,  Katsumasa Suzuki

IPC分类号： B01D53/68

CPC分类号： B01D53/68 ,  B01J20/041 ,  B01J20/28059 ,  B01J2220/42

摘要： The exhaust gas treatment agent of the present invention is an exhaust gas treatment agent provided with a particulate and porous structure, and composed of calcium hydroxide occupying at least a portion of the surface thereof, and calcium oxide occupying the remainder. The specific surface area if preferably 1 m2/g or more, and the void fraction is preferably 10 to 50% by volume. This calcium oxide is obtained by baking particulate calcium carbonate, and exhaust gas discharged from a semiconductor production device is removed of harmful gas components by allowing the exhaust gas to contact and react with this exhaust gas treatment agent while in the gaseous state.

摘要翻译： 本发明的废气处理剂是具有颗粒状和多孔结构的排气处理剂，由占其表面的至少一部分的氢氧化钙构成，其余部分为氧化钙。 比表面积优选为1m 2 / g以上，空隙率优选为10〜50体积％。 该氧化钙是通过焙烧碳酸钙颗粒而获得的，并且通过使废气在气态下与该废气处理剂接触并反应从而从半导体制造装置排出的废气除去有害气体成分。

公开(公告)号：US06206026B1

公开(公告)日：2001-03-27

申请号：US09509346

申请日：2000-03-27

申请人： Ryuichiro Isaki ,  Takuya Ikeda ,  Satoshi Hasaka ,  Hideharu Hasegawa

发明人： Ryuichiro Isaki ,  Takuya Ikeda ,  Satoshi Hasaka ,  Hideharu Hasegawa

IPC分类号： F16K1100

CPC分类号： F16K1/305 ,  F16K7/14 ,  Y10T137/4259

摘要： A valve for a gas cylinder consisting essentially of a valve body provided with a valve chamber containing a valving element which opens and closes an annular valve seat, and a gas cylinder plugging end portion and a pipe-connecting port both formed on the valve body. The gas cylinder plugging end portion contains an upstream side gas channel communicating at one extremity to an end thereof and at the other extremity to an internal circumference of the valve seat. The port contains two downstream side gas channels each opening to an end thereof and at the other extremity to an external circumference of the valve seat. A metal connector can be fitted in the port. The metal connector contains two channels connected to the two downstream side gas channels respectively. Valve chamber openings of the downstream side gas channels are located to oppose each other across the valve seat.

摘要翻译： 一种用于气瓶的阀，主要由阀体构成，该阀体设置有包含打开和关闭环形阀座的阀元件的阀室，以及形成在阀体上的气瓶堵塞端部和管连接口。 气瓶堵塞端部包含一端上端连通的上游侧气体通道，另一端包含在阀座的内周。 该端口包含两个下游侧气体通道，每个下游侧气体通道各自通向其端部并且在另一个端部处于阀座的外部圆周。 可以在端口安装金属连接器。 金属连接器包括分别连接到两个下游侧气体通道的两个通道。 下游侧气体通道的阀室开口位于阀座上彼此相对。