公开(公告)号：US20030010917A1

公开(公告)日：2003-01-16

申请号：US09906441

申请日：2001-07-16

Applicant: HETRON

Inventor： James D. Parsons

IPC: G01J005/00

CPC classification number: H01L31/0256 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/09

Abstract: Single crystal SiC at least 200 micrometers thick is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. Applications include IR radiation sensing, contactless temperature sensing and an IR controlled varistor.

Abstract translation: 使用至少200微米厚的单晶SiC通过声吸收机制检测波长小于约10微米的电磁辐射。 应用包括红外辐射感测，非接触式温度感测和红外控制压敏电阻。

公开(公告)号：US20030146502A1

公开(公告)日：2003-08-07

申请号：US10175940

申请日：2002-06-20

Applicant: Hetron

Inventor： James D. Parsons

IPC: H01L021/48 ,  H01L023/06

CPC classification number: G01K7/16 ,  H01C7/022 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1nullxN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

公开(公告)号：US20020179992A1

公开(公告)日：2002-12-05

申请号：US10175933

申请日：2002-06-20

Applicant: Hetron

Inventor： James D. Parsons

IPC: H01L021/00 ,  H01L031/058

CPC classification number: G01K7/16 ,  H01C7/022 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1nullxN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

Abstract translation: 高温混合电路结构包括温度敏感器件，其包括通过电极连接到物理地结合到AlN管芯的导电安装层的SiC，AlN和/或Al x Ga 1-x N（x> 0.69）。 模具，温度敏感装置和安装层（可以是W，WC或W2C）的温度系数彼此在1.06以内。 安装层可以完全由W，WC或W2C粘合剂层组成，或具有覆盖金属化层的粘合剂层，其热膨胀系数不大于粘合层的约3.5倍。 该装置可以用反应的硼硅酸盐混合物包封，具有或不具有上模具，其有助于保持引线并增加结构完整性。 应用包括温度传感器，压力传感器，化学传感器，以及高温和高功率电子电路。