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公开(公告)号：US12059739B2
公开(公告)日：2024-08-13
申请号：US17808908
申请日：2022-06-24
CPC分类号： B23K1/20 , B23K1/008 , H01L2021/60015
摘要： The present invention relates to a method for producing a metal-ceramic substrate. The method has the following steps: providing a stack containing a ceramic body, a metal foil, and a solder material in contact with the ceramic body and the metal foil, wherein the solder material has: a metal having a melting point of at least 700° C., a metal having a melting point of less than 700° C., and an active metal; and heating the stack, wherein at least one of the following conditions is satisfied: the high temperature heating duration is no more than 60 min; the peak temperature heating duration is no more than 30 min; the heating duration is no more than 60 min.
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公开(公告)号：US10593608B2
公开(公告)日：2020-03-17
申请号：US15974930
申请日：2018-05-09
IPC分类号： H01L23/06 , H01L23/29 , H01L23/473 , H01L23/31 , H01L23/373 , H01L23/467 , H01L23/00 , H01L23/367
摘要： A semiconductor module (10) contains a ceramic interconnect device (50) having at least one semiconductor component (20). The at least one semiconductor component (20) is covered by an encapsulating compound (30) which contains a cured inorganic cement and has a thermal expansion coefficient in the range of 2 to 10 ppm/K. The ceramic of the ceramic interconnect device (50) is selected from ceramics based on aluminum oxide, aluminum nitride or silicon nitride.
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