公开(公告)号：US09361912B1

公开(公告)日：2016-06-07

申请号：US14690693

申请日：2015-04-20

Applicant: Headway Technologies, Inc. ,  TDK Corporation

Inventor： Yue Liu ,  Atsushi Yamaguchi ,  Yuhui Tang ,  Jiun-Ting Lee ,  Yaguang Wei ,  Xiaomin Liu ,  Hideyuki Ukita ,  Moris Dovek ,  Michitaka Nishiyama

IPC: G11B5/187 ,  G11B5/39 ,  G11B5/31 ,  G11B5/008 ,  G11B5/127 ,  G11B5/11

CPC classification number: G11B5/3116 ,  G11B5/00826 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/6082

Abstract: A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a side gap and a 10-16 kG magnetic layer in the side shields, and between a 16-19 kG magnetic layer and the leading gap in the leading shield to improve Hy_grad and Hy_grad_x while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of ≦0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of ≦0.5 micron. First and second sides may form a continuous curve or the a double tapered design where first and second sides have different angles with respect to a center plane. The side shield design described herein is especially beneficial for side gaps of 20-60 nm.

Abstract translation: 公开了一种PMR写入器，其中在侧面间隙和侧面屏蔽中的10-16kG磁性层之间形成由19-24千兆（kG）磁性材料制成的热种子层（HS），并且在16-19 kG磁性层和前盾的领先缺口，在保持写入能力的同时提高Hy_grad和Hy_grad_x。 HS为10至100nm厚，并且具有面向写入极的第一侧，高度为＆lt; nlE; 0.15微米，以及面向主极扩张侧的第二面，其可延伸至全侧屏蔽高度＆lt; 微米。 第一和第二侧可以形成连续曲线或双锥形设计，其中第一和第二侧相对于中心平面具有不同的角度。 本文所述的侧面屏蔽设计对于20-60nm的侧面间隙特别有利。

公开(公告)号：US09589582B2

公开(公告)日：2017-03-07

申请号：US15162091

申请日：2016-05-23

Applicant: Headway Technologies, Inc. ,  TDK Corporation

Inventor： Yue Liu ,  Atsushi Yamaguchi ,  Yuhui Tang ,  Jiun-Ting Lee ,  Yaguang Wei ,  Xiaomin Liu ,  Hideyuki Ukita ,  Moris Dovek ,  Michitaka Nishiyama

IPC: G11B5/31 ,  G11B5/60 ,  G11B5/127

CPC classification number: G11B5/3116 ,  G11B5/00826 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/6082

Abstract: A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a gap layer and a 10-16 kG magnetic layer in the side shields, and between the leading gap and a 16-19 kG magnetic layer in the leading shield to improve the track field gradient and cross-track field gradient while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of ≦0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of ≦0.5 micron. The trailing shield has a second hot seed layer on the write gap and a 16-19 kG magnetic layer that contacts the 10-16 kG side shield magnetic layer thereby forming an all wrap around (AWA) shield configuration.

Abstract translation: 公开了一种PMR写入器，其中在侧面屏蔽之间的间隙层和10-16kG磁性层之间以及在前导间隙和第二磁性层之间形成由19-24千兆（kG）磁性材料制成的热种子层（HS） 一个16-19 kG的磁屏蔽层，以提高轨道场梯度和跨轨道场梯度，同时保持写入能力。 HS为10至100nm厚，并且具有面向高度≤0.15微米的写极的第一面和面向主极扩张侧的第二面，其可延伸至≤0.5微米的全侧屏蔽高度。 后屏蔽在写间隙上具有第二热种子层，以及接触10-16kG侧屏蔽磁性层的16-19kG磁性层，从而形成全包裹（AWA）屏蔽配置。

公开(公告)号：US20160307586A1

公开(公告)日：2016-10-20

申请号：US15162091

申请日：2016-05-23

Applicant: Headway Technologies, Inc. ,  TDK Corporation

Inventor： Yue Liu ,  Atsushi Yamaguchi ,  Yuhui Tang ,  Jiun-Ting Lee ,  Yaguang Wei ,  Xiaomin Liu ,  Hideyuki Ukita ,  Moris Dovek ,  Michitaka Nishiyama

IPC: G11B5/31 ,  G11B5/127 ,  G11B5/60

CPC classification number: G11B5/3116 ,  G11B5/00826 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3912 ,  G11B5/6082

Abstract: A PMR writer is disclosed wherein a hot seed layer (HS) made of a 19-24 kilogauss (kG) magnetic material is formed between a gap layer and a 10-16 kG magnetic layer in the side shields, and between the leading gap and a 16-19 kG magnetic layer in the leading shield to improve Hy_grad and Hy_grad_x while maintaining write-ability. The HS is from 10 to 100 nm thick and has a first side facing the write pole with a height of ≦0.15 micron, and a second side facing a main pole flared side that may extend to a full side shield height of ≦0.5 micron. First and second sides may form a continuous curve or a double tapered design where first and second sides have different angles with respect to a center plane. The side shield design described herein is especially beneficial for side gaps of 20-60 nm.

Abstract translation: 公开了一种PMR写入器，其中在侧面屏蔽之间的间隙层和10-16kG磁性层之间以及在前导间隙和第二磁性层之间形成由19-24千兆（kG）磁性材料制成的热种子层（HS） 一个16-19 kG的磁屏蔽层，在保持写入能力的同时提高Hy_grad和Hy_grad_x。 HS为10至100nm厚，并且具有面向高度≤0.15微米的写极的第一面和面向主极扩张侧的第二面，其可延伸至≤0.5微米的全侧屏蔽高度。 第一和第二侧可以形成连续曲线或双锥形设计，其中第一和第二侧相对于中心平面具有不同的角度。 本文所述的侧面屏蔽设计对于20-60nm的侧面间隙特别有利。

公开(公告)号：US20240312483A1

公开(公告)日：2024-09-19

申请号：US18122362

申请日：2023-03-16

Applicant: Headway Technologies, Inc.

Inventor： Yu-Hsia Chen ,  Weihao Xu ,  Jiun-Ting Lee ,  Weisheng Hu ,  Yuhui Tang ,  Yue Liu

IPC: G11B5/11 ,  G11B5/127

CPC classification number: G11B5/112 ,  G11B5/1278

Abstract: The present embodiments relate to a perpendicular magnetic recording (PMR) write head with a self-aligned side gap insulator. A self-aligned SG oxide insulator can reduce or eliminate the current from MP to SS. The SG insulator can force the writer current to go through a writer gap and leading gap, which can improve ATI and TPI performance.

公开(公告)号：US20170076742A1

公开(公告)日：2017-03-16

申请号：US15361726

申请日：2016-11-28

Applicant: Headway Technologies, Inc.

Inventor： Yuhui Tang ,  Yaguang Wei ,  Jiun-Ting Lee

IPC: G11B5/127 ,  G11B5/31 ,  G11B5/60

CPC classification number: G11B5/112 ,  G11B5/127 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/235 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3143 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3169

Abstract: A perpendicular magnetic recording writer with an all wrap around (AWA) shield design wherein one or more of the leading shield, trailing shield, and side shields comprises a magnetic “hot seed” layer made of a >19 kG to 24 kG material that adjoins a gap layer, and a side of the hot seed layer opposite the gap layer adjoins a high damping magnetic layer made of a 10-16 kG material (or a 16-19 kG material in the trailing shield) having a Gilbert damping parameter α>0.04. In one embodiment, the high damping magnetic layer is FeNiRe with a Re content of 3 to 15 atomic %. The main pole leading and trailing sides may be tapered. Side shields may have a single taper or dual taper structure. Higher writer speed with greater areal density capability is achieved.

Abstract translation: 具有全包裹（AWA）屏蔽设计的垂直磁记录写入器，其中一个或多个前屏蔽，后屏蔽和侧屏蔽包括由> 19kG至24kG材料制成的磁性“热种子”层，其邻接 间隙层和与间隙层相对的热种子层的一侧与由10-16kG材料（或后盾的16-19kG材料）制成的高阻尼磁性层具有吉尔伯特阻尼参数α> 0.04。 在一个实施例中，高阻尼磁性层是Re含量为3至15原子％的FeNiRe。 主杆的前端和后端可以是锥形的。 侧面屏蔽可以具有单个锥形或双锥形结构。 实现了更高的写入速度，具有更大的面密度能力。

公开(公告)号：US09406317B1

公开(公告)日：2016-08-02

申请号：US14819534

申请日：2015-08-06

Applicant: Headway Technologies, Inc.

Inventor： Yuhui Tang ,  Yaguang Wei ,  Jiun-Ting Lee ,  Ping-Wei Zhuang

IPC: G11B5/31 ,  G11B5/127 ,  G11B5/11

CPC classification number: G11B5/6082 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315

Abstract: A perpendicular magnetic recording writer is disclosed with a side shield separated from a write pole side by a gap layer at an air bearing surface (ABS) where the side shield has a first sidewall facing the write pole with an end at height (h1) from the ABS, and a second sidewall at height h1 that is parallel to the ABS. The write pole side is curved such that a first portion proximate to the ABS is at an angle of 0 to 40 degrees with respect to a center plane formed orthogonal to the ABS, and a second section proximate to a corner where the curved side connects with a flared main pole side is formed substantially parallel to the second sidewall. When h1 is 30-80 nm, and the corner is 80-150 nm from the ABS, overwrite is improved while cross-track field gradient is enhanced.

Abstract translation: 公开了一种垂直磁记录装置，其具有侧面屏蔽，该侧屏蔽在空气轴承表面（ABS）处由间隙层与写入极侧分离，其中侧屏具有面向写极的第一侧壁，高度（h1） ABS，以及平行于ABS的高度为h1的第二侧壁。 写极侧是弯曲的，使得接近ABS的第一部分相对于与ABS正交形成的中心平面成0度到40度的角度，以及靠近拐角处的第二部分，其中弯曲侧与 形成大致平行于第二侧壁的扩口主极侧。 当h1为30-80nm，角为80-150nm时，覆盖提高，而跨轨道场梯度增强。

公开(公告)号：US20240363140A1

公开(公告)日：2024-10-31

申请号：US18769298

申请日：2024-07-10

Applicant: Headway Technologies, Inc.

Inventor： Kei Hirata ,  Kowang Liu ,  Yue Liu ,  Jiun-Ting Lee ,  Weihao Xu

IPC: G11B5/11

CPC classification number: G11B5/11

Abstract: The present embodiments relate to a perpendicular magnetic recording (PMR) write head with an STO element and configured to direct an electric current between elements of the write head. A first example embodiment describes a perpendicular magnetic recording (PMR) write head. The PMR write head can include a main pole comprising a tip portion disposed adjacent to an air bearing surface (ABS) and is configured to interact with a magnetic recording medium. The PMR write head can also include a spin torque oscillator (STO) element disposed adjacent to the main pole. The PMR write head can also include a side shield layer with a portion of the side shield layer disposed adjacent to the ABS. The PMR write head can also include a metallic side gap layer disposed between the main pole and the side shield layer.

公开(公告)号：US12073857B1

公开(公告)日：2024-08-27

申请号：US18110347

申请日：2023-02-15

Applicant: Headway Technologies, Inc.

Inventor： Kei Hirata ,  Kowang Liu ,  Yue Liu ,  Jiun-Ting Lee ,  Weihao Xu

IPC: G11B5/11

CPC classification number: G11B5/11

Abstract: The present embodiments relate to a perpendicular magnetic recording (PMR) write head with an STO element and configured to direct an electric current between elements of the write head. A first example embodiment describes a perpendicular magnetic recording (PMR) write head. The PMR write head can include a main pole comprising a tip portion disposed adjacent to an air bearing surface (ABS) and is configured to interact with a magnetic recording medium. The PMR write head can also include a spin torque oscillator (STO) element disposed adjacent to the main pole. The PMR write head can also include a side shield layer with a portion of the side shield layer disposed adjacent to the ABS. The PMR write head can also include a metallic side gap layer disposed between the main pole and the side shield layer.

公开(公告)号：US10229703B2

公开(公告)日：2019-03-12

申请号：US15595357

申请日：2017-05-15

Applicant: Headway Technologies, Inc.

Inventor： Ying Liu ,  Yuhui Tang ,  Jiun-Ting Lee ,  Yue Liu

IPC: G11B5/31 ,  G11B5/11 ,  G11B5/127 ,  G11B5/187 ,  G11B5/235

Abstract: A perpendicular magnetic recording writer is disclosed with an all wrap around (AWA) shield design in which a surface of the leading shield that contacts the lead gap is comprised of a notch that is recessed 20 to 120 nm from the air bearing surface (ABS) and has a first side with a down-track dimension of 20-200 nm that is aligned parallel to the ABS. In one embodiment, the notch is aligned below the main pole leading side and has a cross-track width substantially the same as the track width of the main pole trailing side. The notch has two sidewalls formed equidistant from a center plane that bisects the leading shield wherein each sidewall intersects the first side at an angle of 90 to 170 degrees. Accordingly, overwrite and bit error rate are improved while adjacent track interference and tracks per square inch capability are substantially maintained.

公开(公告)号：US20180277147A1

公开(公告)日：2018-09-27

申请号：US15990092

申请日：2018-05-25

Applicant: Headway Technologies, Inc.

Inventor： Yue Liu ,  Ying Liu ,  Yuhui Tang ,  Jiun-Ting Lee ,  Moris Dovek ,  Yiming Wang

IPC: G11B5/31 ,  G11B5/187 ,  G11B5/127 ,  G11B5/008 ,  G11B5/39

CPC classification number: G11B5/3116 ,  G11B5/00826 ,  G11B5/1278 ,  G11B5/187 ,  G11B5/1871 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3912

Abstract: A PMR writer is disclosed with an all wrap around (AWA) shield design in which one or more of the leading shield, side shields, and trailing shield (TS) structure (except the hot seed layer) at the air bearing surface (ABS) are comprised of an alloy having a damping parameter α of ≥0.04 to minimize wide area track erasure (WATE). The TS structure comprises two outer magnetic layers with an 8-16 kiloGauss (kG) saturation magnetic moment (Ms) on each side of a center stack with a lower write gap, a middle hot seed layer (Ms of 19-24 kG), and an upper magnetic layer (Ms of 16-24 kG). The hot seed layer, upper TS magnetic layer and overlying PP3 TS promote improved area density capability (ADC). A second TS layer with Ms of 16-24 kG and a full width at the ABS may be formed on the upper magnetic layer.