公开(公告)号：US20240215218A1

公开(公告)日：2024-06-27

申请号：US18088944

申请日：2022-12-27

Applicant: HeFeChip Corporation Limited

Inventor： Liang LI ,  Chunyu WONG ,  John H. ZHANG ,  Yanzun LI ,  Huang LIU ,  Yuan Lung LIN ,  Haijiang YUAN ,  Chung-Chiang LIN

IPC: H10B12/00

CPC classification number: H10B12/0387 ,  H10B12/056 ,  H10B12/36 ,  H10B12/373

Abstract: A semiconductor structure and a method of forming it are disclosed by the present application. Deep trench capacitors are formed in a substrate, and fin contacts formed by upper portions of inner electrodes in the deep trench capacitors are connected to fins on a surface of the substrate. At least one of word lines formed on the substrate pass over and are separated by a word line isolation layer from the inner electrodes. The word line isolation layer covers portions of the inner electrodes between a buried oxide layer and the fin contacts, while the fins are exposed therefrom.