POWER SEMICONDUCTOR DEVICE, METHOD FOR PREPARING POWER SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20240243022A1

    公开(公告)日:2024-07-18

    申请号:US18622823

    申请日:2024-03-29

    CPC classification number: H01L23/142 H01L21/31116 H01L23/3171

    Abstract: The power semiconductor device includes a function layer, a first metal portion, a second metal portion, and an insulation layer. The function layer includes a first area, a second area, and a third area. The third area is located between the first area and the second area. The function layer further includes a first blocking groove provided in the third area. The first metal portion is disposed on the first area. The second metal portion is disposed on the second area. The insulation layer includes a main body and a first blocking portion that are connected. The main body covers the first metal portion, the second metal portion, and the third area. The first blocking groove is filled with the first blocking portion. The function layer further includes at least one passivation layer.

    Powered device used for power over ethernet

    公开(公告)号:US10887117B2

    公开(公告)日:2021-01-05

    申请号:US16422268

    申请日:2019-05-24

    Abstract: A powered device (PD) used for power over Ethernet (PoE), where the PD includes an Ethernet port and a rectifier circuit. The rectifier circuit includes a first control circuit and a second control circuit, where the first control circuit is configured to control a first metal-oxide semiconductor field-effect transistor (MOSFET) and a second MOSFET, avoid turning on the first MOSFET and the second MOSFET at a PoE detection stage, and turn on at least one of the first MOSFET or the second MOSFET at a PoE power supply stage. The second control circuit is configured to control a third MOSFET and a fourth MOSFET, turn on at least one of the third MOSFET or the fourth MOSFET at the PoE power supply stage, and avoid turning on the third MOSFET and the fourth MOSFET at the PoE detection stage.

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