公开(公告)号：US20210409005A1

公开(公告)日：2021-12-30

申请号：US17468504

申请日：2021-09-07

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Qimeng Jiang ,  Xingqiang Peng ,  Chenghao Sun

IPC: H03K3/011 ,  H03K3/356 ,  H03K17/10

Abstract: This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. A first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.

公开(公告)号：US12273103B2

公开(公告)日：2025-04-08

申请号：US17856674

申请日：2022-07-01

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Xingqiang Peng ,  Shaoqing Dong ,  Jing Wen

IPC: H03K17/687 ,  H02M7/5387 ,  H03K17/06

Abstract: This application discloses a drive circuit of a bridge arm switching transistor, a drive circuit, and a power converter. The bridge arm switching transistor includes a first switching transistor and a second switching transistor. A first terminal of the first switching transistor is connected to a power supply, a second terminal of the first switching transistor is connected to a first terminal of the second switching transistor, and a second terminal of the second switching transistor is grounded. The drive circuit includes a low-voltage region and at least two high-voltage regions isolated which include a first high-voltage region and a second high-voltage region. A semiconductor device configured to drive the second switching transistor is disposed in the low-voltage region. P-type semiconductor devices are disposed in each of the first high-voltage region and the second high-voltage region, and the P-type semiconductor devices are configured to drive the first switching transistor.

公开(公告)号：US11522527B2

公开(公告)日：2022-12-06

申请号：US17468504

申请日：2021-09-07

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Qimeng Jiang ,  Xingqiang Peng ,  Chenghao Sun

IPC: H03K3/011 ,  H03K3/356 ,  H03K17/10 ,  H01L29/20

Abstract: This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. A first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.