公开(公告)号：US11522527B2

公开(公告)日：2022-12-06

申请号：US17468504

申请日：2021-09-07

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Qimeng Jiang ,  Xingqiang Peng ,  Chenghao Sun

IPC: H03K3/011 ,  H03K3/356 ,  H03K17/10 ,  H01L29/20

Abstract: This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. A first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.

公开(公告)号：US20210409005A1

公开(公告)日：2021-12-30

申请号：US17468504

申请日：2021-09-07

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Qimeng Jiang ,  Xingqiang Peng ,  Chenghao Sun

IPC: H03K3/011 ,  H03K3/356 ,  H03K17/10

Abstract: This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. A first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.