公开(公告)号：US20230369422A1

公开(公告)日：2023-11-16

申请号：US18361009

申请日：2023-07-28

Applicant: HUAWEI TECHNOLOGIES CO., LTD.

Inventor： Lingcong LE ,  Shujun DAI ,  Xiaogang LI ,  Huilan HU ,  Hao JIANG ,  Chang ZENG

IPC: H01L29/40 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778

CPC classification number: H01L29/404 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/7786

Abstract: This application provides a transistor, including a channel, a source, a drain, a gate, an isolation area disposed on two sides of the channel, and a source field plate located on a side of the gate away from the channel. The source field plate is electrically connected to the source. The source field plate includes a primary field plate and a secondary field plate. The primary field plate partially overlaps the gate. A side part of the primary field plate crosses the gate and extends to the drain along the channel. A first end of the primary field plate crosses the channel along a direction perpendicular to the channel and enters the isolation area. The secondary field plate is located at a boundary between the channel and the isolation area, and extends from the primary field plate to a direction of the source along the channel.