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Patent Agency Ranking
公开(公告)号：US20230399566A1
公开(公告)日：2023-12-14
申请号：US18190832
申请日：2023-03-27
Inventor： Hee-Sun YANG , Yuri KIM
CPC classification number: C09K11/621 , C09K11/025 , B82Y20/00
Abstract: Proposed are I-III-VI based quantum dots with high efficiency visible light emission for use as display materials and a method for fabricating the same. The quantum dots include a quantum dot core of Group 11-Group 13-Group 16, and Group 17 element attached to a surface of the quantum dot core.
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公开(公告)号：US20240218247A1
公开(公告)日：2024-07-04
申请号：US18452161
申请日：2023-08-18
Inventor： Hee-Sun YANG , Yuri KIM , Yubeen KONG
CPC classification number: C09K11/881 , C09K11/025 , B82Y20/00
Abstract: Quantum dots are proposed. Quantum dots include a multicomponent quantum dot core including four or more elements selected from a combination of Group 11-Group 13-Group 16. The quantum dots may emit band-edge peak wavelength from a red region (590 nm) to an infrared region (700 nm or more).
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3.发明申请公开(公告)号：US20180252864A1
公开(公告)日：2018-09-06
申请号：US15650372
申请日：2017-07-14
Inventor： Hee-Sun YANG , Jong-Hoon KIM , Bu-Yong KIM
CPC classification number: G02B6/0229 , C09K11/584 , C09K11/88 , G02F1/017 , G02F1/25 , G02F2001/01791 , G02F2202/107 , Y02B20/181
Abstract: There are provided green-emitting quantum dots (QDs) including I-III-VI type ternary Cu—Ga—S core QDs and ZnS multishell wherein Cu:Ga is 1:10 to 1:1, and a fabricating method thereof. Integration of these QDs and red-emitting QDs into a blue LED leads to the fabrication of a white light-emitting device with high color rendering index. There are also provided blue-emitting QDs including I-III-VI type quaternary Zn—Cu—Ga—S or Cu—Ga—Al—S core QDs and ZnS multishell, and a fabricating method thereof. An electrically-driven blue light-emitting device with a QD emitting layer including these QDs interposed between a hole transport layer and an electron transport layer is fabricated.
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公开(公告)号：US20200321490A1
公开(公告)日：2020-10-08
申请号：US16817162
申请日：2020-03-12
Inventor： Hee-Sun YANG , Chang-Yeol HAN
IPC: H01L33/06 , H01L33/30 , H01L33/00 , H01L25/075
Abstract: The metal oxide nanoparticle includes a Zn-containing metal Me1 oxide nanoparticle of Zn1-xMe1xO(0≤x≤0.5) composition, and a metal Me2 ion surface treatment layer formed on a surface of the nanoparticle. Here, the metal Me1 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof, and the metal Me2 is any one selected from Li, Be, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Zr, Nb, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Ba and a combination thereof.
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公开(公告)号：US20200028025A1
公开(公告)日：2020-01-23
申请号：US16132244
申请日：2018-09-14
Inventor： Hee-Sun YANG
Abstract: Disclosed is an optoelectronic device including a lanthanum-based active layer and a method for fabricating the same. The optoelectronic device includes an active layer of multiple quantum well (MQW) structure including each well between walls, wherein the wall is a dielectric layer selected from alkali metal halide, alkali earth metal halide, alkali metal chalcogenide and alkali earth metal chalcogenide, and the well is a layer including semiconductor selected from lanthanum-based metal halide, lanthanum-based metal chalcogenide, transition metal (including post transition metal) halide and transition metal chalcogenide. The optoelectronic device including the active layer can be used in applications of LEDs, displays, optical sensors and solar cells. When the active layer is used as a photoconversion layer, displays can be implemented by upconversion or downconversion of short wavelength of UV, blue and IR light source to visible wavelength of red, green and blue.
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