公开(公告)号：US09846028B2

公开(公告)日：2017-12-19

申请号：US15114909

申请日：2014-10-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenichi Ohtsuka ,  Tetsuhisa Nakano

IPC: G01B11/06 ,  G01N21/27

CPC classification number: G01B11/0625 ,  G01B11/0691 ,  G01N21/27

Abstract: A film thickness measurement device 1A includes a light emission unit 10 for emitting light onto a measurement object 100, a light detection unit 20A for detecting the wavelength-dependent intensity of reflected light, and a film thickness calculation unit 30A for determining the film thickness of a first film 102 by comparing measured spectral reflectance obtained based on the detection result in the light detection unit 20A with theoretical spectral reflectance that takes into account front surface reflectance, front surface transmissivity, and back surface reflectance. The film thickness calculation unit 30A compares the measured spectral reflectance with a plurality of values of the theoretical spectral reflectance obtained by changing the front surface reflectance value, the front surface transmissivity value, and the back surface reflectance value, and determines the film thickness of the first film 102 based on the theoretical spectral reflectance closest to the measured spectral reflectance.