公开(公告)号：US11988497B2

公开(公告)日：2024-05-21

申请号：US17634298

申请日：2020-08-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ikuo Arata ,  Satoshi Takimoto ,  Kenichi Ohtsuka

IPC: G01B11/06 ,  G01B5/06 ,  G01B11/02 ,  G02B17/08

CPC classification number: G01B11/0625 ,  G01B5/06 ,  G01B11/02 ,  G01B11/06 ,  G02B17/0816 ,  G02B17/0868

Abstract: An optical unit includes an input portion configured to have measurement light having a wavelength extending from an ultraviolet region to a visible region input thereto, an optical system configured to condense the measurement light in a state where a chromatic aberration is caused to occur, and an opening portion configured not to image light having a wavelength in the visible region and to image light having a wavelength in the ultraviolet region of the measurement light having a chromatic aberration having occurred therein.

公开(公告)号：US11280604B2

公开(公告)日：2022-03-22

申请号：US16959683

申请日：2018-10-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenichi Ohtsuka

IPC: G01B11/06 ,  G01N21/45

Abstract: A film thickness measurement device includes a light output unit that outputs measurement light, a spectroscopic detection unit that detects detection light, and an analysis unit that compares a measured reflectance for each wavelength of a measurement object with a theoretical reflectance and analyzes a film thickness of a first film and a film thickness of a second film. The analysis unit acquire candidates for optimal solutions of the film thicknesses using a result of comparison between the measured reflectance and the theoretical reflectance for each wavelength of the measurement object in a first wavelength range and determines the optimal solutions of the film thicknesses out of the candidates for the optimal solutions using a result of comparison between the measured reflectance and the theoretical reflectance for each wavelength of the measurement object in a second wavelength range.

公开(公告)号：US09846028B2

公开(公告)日：2017-12-19

申请号：US15114909

申请日：2014-10-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenichi Ohtsuka ,  Tetsuhisa Nakano

IPC: G01B11/06 ,  G01N21/27

CPC classification number: G01B11/0625 ,  G01B11/0691 ,  G01N21/27

Abstract: A film thickness measurement device 1A includes a light emission unit 10 for emitting light onto a measurement object 100, a light detection unit 20A for detecting the wavelength-dependent intensity of reflected light, and a film thickness calculation unit 30A for determining the film thickness of a first film 102 by comparing measured spectral reflectance obtained based on the detection result in the light detection unit 20A with theoretical spectral reflectance that takes into account front surface reflectance, front surface transmissivity, and back surface reflectance. The film thickness calculation unit 30A compares the measured spectral reflectance with a plurality of values of the theoretical spectral reflectance obtained by changing the front surface reflectance value, the front surface transmissivity value, and the back surface reflectance value, and determines the film thickness of the first film 102 based on the theoretical spectral reflectance closest to the measured spectral reflectance.