公开(公告)号：US20150340402A1

公开(公告)日：2015-11-26

申请号：US14646406

申请日：2013-11-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tatsumi YAMANAKA ,  Akira SAKAMOTO ,  Noburo HOSOKAWA

IPC: H01L27/146 ,  H01L31/0224

CPC classification number: H01L27/14663 ,  H01L27/14603 ,  H01L27/14636 ,  H01L31/022408 ,  H01L31/10 ,  H01L31/103

Abstract: A photodiode array includes a plurality of photodiodes formed in a semiconductor substrate. Each of the photodiodes includes a first semiconductor region of a first conductivity type, and provided in the semiconductor substrate, a second semiconductor region of a second conductivity type, provided with respect to the first semiconductor region on one surface side of the semiconductor substrate so as to surround a predetermined region, and constituting a light detection region together with the first semiconductor region, and a through-electrode provided within a through-hole passing through the one surface and the other surface of the semiconductor substrate so as to pass through the first semiconductor region and the predetermined region, and electrically connected to the second semiconductor region. The through-hole includes a portion expanded from the one surface toward the other surface.

Abstract translation: 光电二极管阵列包括形成在半导体衬底中的多个光电二极管。 每个光电二极管包括第一导电类型的第一半导体区域，并且设置在半导体衬底中，相对于半导体衬底的一个表面侧上的第一半导体区域提供第二导电类型的第二半导体区域，以便 围绕预定区域并与第一半导体区域一起构成光检测区域;以及通孔，其设置在穿过半导体衬底的一个表面和另一个表面的通孔内，以穿过第一半导体区域 半导体区域和预定区域，并且电连接到第二半导体区域。 通孔包括从一个表面朝向另一个表面膨胀的部分。

公开(公告)号：US20140084173A1

公开(公告)日：2014-03-27

申请号：US14055923

申请日：2013-10-17

Applicant: Hamamatsu Photonics K.K.

Inventor： Tatsumi YAMANAKA

IPC: H01L31/118 ,  G01T1/20

CPC classification number: G01T1/2018 ,  G01T1/2006 ,  H01L27/1446 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14661 ,  H01L31/118

Abstract: On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.

Abstract translation: 在n型半导体衬底的正面上，p型区域被二维排列成阵列。 在彼此相邻的p型区域之间设置高浓度的n型区域和p型区域。 高浓度的n型区域通过从正面观察从p型区域的周围扩散n型杂质而形成。 p型区域通过从基板的正面侧扩散p型杂质而形成，以便包围从正面观察的p型区域和高浓度n型区域。 在n型半导体衬底的正面上形成有电连接到p型区域的电极和与高浓度n型区域和p型区域电连接的电极。

公开(公告)号：US20140084172A1

公开(公告)日：2014-03-27

申请号：US14055902

申请日：2013-10-17

Applicant: Hamamatsu Photonics K.K.

Inventor： Tatsumi YAMANAKA

IPC: H01L31/118 ,  G01T1/20

CPC classification number: G01T1/2018 ,  G01T1/2006 ,  H01L27/1446 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14661 ,  H01L31/118

Abstract: On the front side of an n-type semiconductor substrate, p-type regions are two-dimensionally arranged in an array. A high-concentration n-type region and a p-type region are disposed between the p-type regions adjacent each other. The high-concentration n-type region is formed by diffusing an n-type impurity from the front side of the substrate so as to surround the p-type region as seen from the front side. The p-type region is formed by diffusing a p-type impurity from the front side of the substrate so as to surround the p-type region and high-concentration n-type region as seen from the front side. Formed on the front side of the n-type semiconductor substrate are an electrode electrically connected to the p-type region and an electrode electrically connected to the high-concentration n-type region and the p-type region.