公开(公告)号：US20180191968A1

公开(公告)日：2018-07-05

申请号：US15739870

申请日：2016-06-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tomohiro YAMAZAKI ,  Takashi SUZUKI

IPC: H04N5/341 ,  H01L27/146 ,  H04N5/374 ,  H04N5/378 ,  H04N5/372

CPC classification number: H04N5/341 ,  G01T1/20 ,  H01L27/14 ,  H01L27/146 ,  H04N5/32 ,  H04N5/3597 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378

Abstract: A solid-state imaging device includes a photodetecting unit and a signal readout unit, and further includes a control unit controlling an operation of each of the photodetecting unit and the signal readout unit. The photodetecting unit includes M×N pixels on a first principal surface of a semiconductor substrate having the first principal surface and a second principal surface opposite to each other. Each pixel includes a plurality of buried photodiodes, a capacitance portion a plurality of transfer switches, and an output switch.

公开(公告)号：US20140071429A1

公开(公告)日：2014-03-13

申请号：US14077029

申请日：2013-11-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Takashi SUZUKI

IPC: G01C3/08

CPC classification number: G01C3/08 ,  G01S7/481 ,  G01S7/4863 ,  G01S17/89 ,  G01S17/936 ,  H01L27/14603 ,  H01L31/02024

Abstract: The range image sensor is a range image sensor which is provided on a semiconductor substrate with an imaging region composed of a plurality of two-dimensionally arranged units (pixel P), thereby obtaining a range image on the basis of charge quantities QL, QR output from the units. One of the units is provided with a charge generating region (region outside a transfer electrode 5) where charges are generated in response to incident light, at least two semiconductor regions 3 which are arranged spatially apart to collect charges from the charge generating region, and a transfer electrode 5 which is installed at each periphery of the semiconductor region 3, given a charge transfer signal different in phase, and surrounding the semiconductor region 3.

Abstract translation: 距离图像传感器是在具有由多个二维排列单位（像素P）构成的摄像区域的半导体基板上设置的范围图像传感器，从而基于电荷量QL，QR输出获得范围图像 从单位。 其中一个单元设置有响应于入射光产生电荷的电荷产生区域（转移电极5之外的区域），至少两个半导体区域3，空间间隔开，以从电荷产生区域收集电荷;以及 传输电极5，其安装在半导体区域3的每个周边，给定相位不同的电荷转移信号，并且围绕半导体区域3。

公开(公告)号：US20200333459A1

公开(公告)日：2020-10-22

申请号：US16097664

申请日：2017-04-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akihiro SHIMADA ,  Mitsuhito MASE ,  Jun HIRAMITSU ,  Takashi SUZUKI

IPC: G01S17/10 ,  G01S7/481 ,  H01L27/144

Abstract: The present embodiment relates to a distance sensor that reduces a difference in amounts of current injected into each of plural charge collection regions prepared for one photosensitive region in order to avoid saturation caused by disturbance light. A current injection circuit injecting current into each charge collection region includes a voltage generation circuit generating a control voltage for adjustment of the injected current amount, and the voltage generation circuit generates the control voltage corresponding to a large amount of charge between the charge amounts of storage nodes coupled, respectively, to the charge collection regions. Meanwhile, a cascode device is disposed between a transistor configured to adjust the amount of current according to the control voltage and the storage node, and a potential of a current output end of the transistor and a potential of the storage node are separated.

公开(公告)号：US20190145767A1

公开(公告)日：2019-05-16

申请号：US16098187

申请日：2017-04-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akihiro SHIMADA ,  Mitsuhito MASE ,  Jun HIRAMITSU ,  Takashi SUZUKI

IPC: G01C3/06 ,  G01S17/10 ,  G01S17/89 ,  G01S7/486 ,  H01L27/146 ,  H04N5/357 ,  H04N5/374

Abstract: The present embodiment relates to a distance sensor configured to inject an equal amount of current into storage nodes coupled, respectively, to charge collection regions where charges of a photosensitive region is distributed by driving of first and second transfer electrodes and obtain a distance to an object based on difference information on charge amounts of the respective storage nodes. Saturation caused by disturbance light of each storage node is avoided by injecting the equal amount of current to each storage node, and the difference information on the charge amounts of the respective storage nodes, which is not easily affected by the current injection, is obtained by driving the first and second transfer electrodes according to the plurality of frames representing the electrode drive pattern, respectively.

公开(公告)号：US20180210069A1

公开(公告)日：2018-07-26

申请号：US15749516

申请日：2016-06-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Mitsuhito MASE ,  Shinya IWASHINA ,  Takashi SUZUKI

IPC: G01S7/486 ,  G01S17/10 ,  H01L31/107 ,  H01L31/167

CPC classification number: G01S7/486 ,  G01S7/4861 ,  G01S17/10 ,  G01S17/42 ,  G01S17/936 ,  H01L31/107 ,  H01L31/167

Abstract: A distance measuring device is configured to measure a distance to an object. The distance measuring device includes a light source configured to emit a projection beam to the object and a light receiving element configured to detect return light of the projection beam that is reflected by the object. The light source is a laser light source configured to emit pulsed light in an ultraviolet range to a blue color range as the projection beam, and the light receiving element is an avalanche photodiode that has spectral sensitivity in an ultraviolet range to a blue color range and operates in a Geiger mode.