公开(公告)号：US20240059555A1

公开(公告)日：2024-02-22

申请号：US17766780

申请日：2020-08-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daiki SUZUKI ,  Takahiro MATSUMOTO ,  Tomoyuki IDE ,  Mikito TAKAHASHI

IPC: B81C1/00 ,  G02B26/08

CPC classification number: B81C1/00825 ,  G02B26/0833 ,  B81C2201/0146 ,  B81C2201/0132

Abstract: A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer and a device layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer and the device layer from the wafer by etching and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning for cleaning the wafer using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a circulation hole penetrating the wafer is formed at a part other than the slit in the wafer by the etching.

公开(公告)号：US20240092634A1

公开(公告)日：2024-03-21

申请号：US17766770

申请日：2020-08-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Daiki SUZUKI ,  Takahiro MATSUMOTO ,  Tomoyuki IDE ,  Mikito TAKAHASHI

IPC: B81C1/00 ,  G02B26/08

CPC classification number: B81C1/00142 ,  B81C1/00952 ,  G02B26/0833 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0133

Abstract: A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer, a device layer, and an intermediate layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer, the device layer, and the intermediate layer from the wafer and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a part of the intermediate layer is removed from the wafer by anisotropic etching.