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    SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SAME 有权
    半导体存储器件，包括其的存储器系统及其操作方法

    公开(公告)号：US20160034371A1

    公开(公告)日：2016-02-04

    申请号：US14730632

    申请日：2015-06-04

    申请人： Gi-Won OH ,  Ju-Yun JUNG ,  Soo-Hyeong KIM ,  Hyun-Joong KIM

    发明人： Gi-Won OH ,  Ju-Yun JUNG ,  Soo-Hyeong KIM ,  Hyun-Joong KIM

    IPC分类号： G06F11/20 ,  G06F3/06

    CPC分类号： G06F3/0688 ,  G06F3/0619 ,  G06F3/0635 ,  G06F3/0659 ,  G11C5/02 ,  G11C5/04 ,  G11C7/1012 ,  G11C8/00 ,  G11C29/76 ,  G11C2207/108

    摘要： A semiconductor memory device includes a memory cell array including a plurality of cell cores which include a first cell core corresponding to a first channel that is a normal channel and a second cell core corresponding to a second channel that is a failed channel; and an access circuit configured to perform address remapping by converting a first address of at least a first failed cell in the first cell core into a second address of at least a second cell in the second cell core, and to transmit data of at least the second cell through the first channel.

    摘要翻译： 一种半导体存储器件包括存储单元阵列，该存储单元阵列包括多个单元核心，所述多个单元核心包括对应于作为正常通道的第一通道的第一单元核心和对应于作为故障通道的第二通道的第二单元核心; 以及接入电路，被配置为通过将所述第一小区核心中的至少第一故障小区的第一地址转换为所述第二小区核心中的至少第二小区的第二地址来执行地址重新映射，并且至少发送 第二个单元格通过第一个通道。