公开(公告)号：US10374591B2

公开(公告)日：2019-08-06

申请号：US15397443

申请日：2017-01-03

Applicant: General Electric Company

Inventor： Ramanujam Ramabhadran ,  Sayan Acharya ,  Han Peng ,  Maja Harfman Todorovic ,  Ahmed Elasser ,  Robert Thomas

IPC: H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H03K17/06 ,  H03K17/16 ,  H01L29/778 ,  H03K17/0812

Abstract: Systems and methods provided herein relate to a gate drive circuit for controlling operation of a wide bandgap semiconductor switch. The systems and methods receive a control signal and configuring an operation signal configured to activate a wide bandgap switch (WBG switch). A profile of the operation signal being based on electrical characteristics of first and second shaping circuits. The systems and methods further deliver the operation signal to the WBG switch.