INTEGRATED SYSTEM FOR SIGNAL AND POWER TRANSMISSION WITH GALVANIC ISOLATION

    公开(公告)号:US20180342349A1

    公开(公告)日:2018-11-29

    申请号:US15987666

    申请日:2018-05-23

    Abstract: An integrated system for signal and power transmission with galvanic isolation is disclosed. The integrated system comprises an insulative layer having a primary side and a secondary side; a planar signal transformer and a planar power transformer for signal and power transmission between the primary and the secondary sides of the insulative layer respectively. The planar signal transformer comprises two signal coupling elements which are disposed on the primary and the secondary sides of the insulative layer respectively. The planar power transformer includes two power coupling elements which are disposed on the primary and the secondary sides of the insulative layer respectively. Each of the two signal coupling elements and the two power coupling elements is embedded in at least one layer of a multi-layer printed circuit board. The integrated system of the present disclosure has a compact structure and is suitable for automatic assembly and manufacturing.

    Power semiconductor device and snubber circuit thereof

    公开(公告)号:US10389230B2

    公开(公告)日:2019-08-20

    申请号:US15903710

    申请日:2018-02-23

    Abstract: The present disclosure relates to a snubber circuit which comprises a static snubber unit, connected in parallel with the switch, for balancing a static voltage sharing across a switch when the switch is in a state of turn-on or turn-off; and a dynamic snubber unit for balance a dynamic voltage sharing across the switch when the switch is in a process of turn-on or turn-off, comprising a dynamic voltage sharing capacitor connected in parallel with the switch and having a relationship between a capacitance and a voltage of the dynamic voltage sharing capacitor; and a controller for controlling the capacitance of the dynamic voltage sharing capacitor to be in a predetermined working area of capacitance rising while the voltage across the switch is increasing. The present disclosure also relates to a power semiconductor device.

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