公开(公告)号：US20190318931A1

公开(公告)日：2019-10-17

申请号：US15950364

申请日：2018-04-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Xiaohan Wang ,  Qiang Fang ,  Zhiguo Sun ,  Jinping Liu ,  Hui Zang

IPC: H01L21/033 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522

Abstract: Methods of self-aligned multiple patterning and structures formed by self-aligned multiple patterning. A mandrel line is patterned from a first mandrel layer disposed on a hardmask and a second mandrel layer disposed over the first mandrel layer. A first section of the second mandrel layer of the mandrel line is removed to expose a first section of the first mandrel layer. The first section of the first mandrel layer is masked, and the second sections of the second mandrel layer and the underlying second portions of the first mandrel layer are removed to expose first portions of the hardmask. The first portions of the hardmask are then removed with an etching process to form a trench in the hardmask. A second portion of the hardmask is masked by the first portion of the first mandrel layer during the etching process to form a cut in the trench.

公开(公告)号：US10446395B1

公开(公告)日：2019-10-15

申请号：US15950364

申请日：2018-04-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Xiaohan Wang ,  Qiang Fang ,  Zhiguo Sun ,  Jinping Liu ,  Hui Zang

IPC: H01L21/033 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: Methods of self-aligned multiple patterning and structures formed by self-aligned multiple patterning. A mandrel line is patterned from a first mandrel layer disposed on a hardmask and a second mandrel layer disposed over the first mandrel layer. A first section of the second mandrel layer of the mandrel line is removed to expose a first section of the first mandrel layer. The first section of the first mandrel layer is masked, and the second sections of the second mandrel layer and the underlying second portions of the first mandrel layer are removed to expose first portions of the hardmask. The first portions of the hardmask are then removed with an etching process to form a trench in the hardmask. A second portion of the hardmask is masked by the first portion of the first mandrel layer during the etching process to form a cut in the trench.

公开(公告)号：US10192780B1

公开(公告)日：2019-01-29

申请号：US15991529

申请日：2018-05-29

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiaohan Wang ,  Jiehui Shu ,  Brendan O'Brien ,  Terry A. Spooner ,  Jinping Liu ,  Ravi Prakash Srivastava

IPC: H01L29/40 ,  H01L21/768 ,  H01L21/311 ,  H01L23/522 ,  H01L23/528

Abstract: Methods of self-aligned double patterning and improved interconnect structures formed by self-aligned double patterning. A mandrel line including an upper layer and a lower layer is formed over a hardmask. A non-mandrel cut block is formed over a portion of a non-mandrel line, after which the upper layer of the mandrel line is removed. An etch mask is formed over a first section of the lower layer of the mandrel line defining a mandrel cut block over a first portion of the hardmask. The first section of the lower layer is arranged between adjacent second sections of the lower layer. The second sections of the lower layer of the mandrel line are removed to expose respective second portions of the hardmask, and the second portions of the hardmask are removed to form a trench. The mandrel cut block masks the first portion of the hardmask during the etching process.